1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ohmic contacts to n-GaAs nanowires
Rent:
Rent this article for
USD
10.1063/1.3603041
/content/aip/journal/jap/110/1/10.1063/1.3603041
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/1/10.1063/1.3603041

Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) SEM micrographs of contacted n-GaAs nanowires with the two different contact systems annealed at various temperatures. (c) SEM image and EDS mapping including the elements Ga, As, Au, and Ge of a thinned GaAs nanowire with Ge/Ni/Ge/Au contacts after annealing at 360 °C. All scale bars are 1 μm.

Image of FIG. 2.
FIG. 2.

Correlation coefficients R 2 of a linear best-fit to the I-V plots vs the slope of this best-fit line (resistance) for Pd/Ge/Au contacts annealed at 280 °C (triangles) and Ge/Ni/Ge/Au contacts annealed at 320 °C (squares). The inset shows the low-resistance regime in a more adequate scale.

Image of FIG. 3.
FIG. 3.

(Color online) (a) I-V characteristics of the Pd/Ge/Au contacts to n-GaAs nanowires for different contact spacing l1-2, l2-3, l3-4 after contact annealing at 280 °C. The determined contact spacings were 1.2, 2.5, and 4 μm, respectively. The inset shows an optical micrograph of the TLM structure. Scale bar is 20 μm. (b) Total resistance R T derived from (a) as a function of the contact spacing l. The inset shows a SEM micrograph of the investigated nanowire TLM device with a scale bar of 2 μm.

Image of FIG. 4.
FIG. 4.

Histograms of the contact resistance R c (a) and specific contact resistance ρ c (b) for the two investigated contact systems Pd/Ge/Au (black columns) and Ge/Ni/Ge/Au (gray columns). In total, TLM data of 12 Pd-based and 4 Ni-based devices was analyzed.

Tables

Generic image for table
Table I.

Parameters extracted from the measurements of the TLM and two point structures with Ge/Ni/Ge/Au and Pd/Ge/Au contacts to n-GaAs nanowires.

Loading

Article metrics loading...

/content/aip/journal/jap/110/1/10.1063/1.3603041
2011-07-05
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contacts to n-GaAs nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/1/10.1063/1.3603041
10.1063/1.3603041
SEARCH_EXPAND_ITEM