(Color online) Schematic diagram of Ga-polarity GaN on Si(111) substrate, AlN as intermediate layer (buffer) grown by MBE, and view of Ohmic and Schottky contacts.
(Color online) Current density vs reverse bias voltage characteristics of Ga-polarity GaN Schottky diode as a function of temperature, and inset figure shows the plot of SBH as a function of temperature.
(Color online) A Richardson’s plot of ln(Js/T2 ) vs 1000/T for Ga-polarity GaN Schottky diodes.
(Color online) The plot of ln(J/Er ) vs sqrt(E), and the inset figure shows plot of intercepts B(T) obtained from curves of Fig. 4 as a function of 1000/T for Ga-polarity GaN Schottky diode.
The deep level transient spectroscopy signal of Ga-polarity GaN Schottky diode measured at an emission rate window of 0.065 s−1 (Vfill = 0V, Vr =− 4V, and filling pulse width 28 ms).
(Color online) The Arrhenius plot of ln(en/T2 ) vs 1000/T, and inset figure shows the DLTS spectra are shown for the corresponding four rate windows determined by the values of t1 and t2 for Ga-polarity GaN Schottky diode.
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