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Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells
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10.1063/1.3653960
/content/aip/journal/jap/110/10/10.1063/1.3653960
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3653960
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-sectional SEM micrographs from (a) as-UHVCVD grown, and (b) the etched sample B (16 period Si0.8Ge0.2/Si MQWs). (c) The sketch of the cavity formed by the mirrors at the surface and the Si substrate interface.

Image of FIG. 2.
FIG. 2.

(Color online) Room-temperature PL and reflectance spectrum from the (a) etched sample A, and (b) and the etched sample B.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Normalized temperature-dependent PL spectra of sample B from 10 to 300 K. (b) Temperature-dependent peak wavelength (or energies) and solid lines are the fitting of the experimental data based on Eq. (5).

Image of FIG. 4.
FIG. 4.

(Color online) IV characteristics of the ITO/i-SiGe/Si HNR/n -Si diode; the area of the diode is 4 × 4 mm2. The inset shows the schematic diagram of the device.

Image of FIG. 5.
FIG. 5.

(Color online) Room-temperature EL spectra of the ITO/i-SiGe/Si HNR/n -Si diode device under various current densities. The inset shows the integrated EL intensity of the devices as a function of injection current density.

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/content/aip/journal/jap/110/10/10.1063/1.3653960
2011-11-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3653960
10.1063/1.3653960
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