(Color online) Cross-sectional SEM micrographs from (a) as-UHVCVD grown, and (b) the etched sample B (16 period Si0.8Ge0.2/Si MQWs). (c) The sketch of the cavity formed by the mirrors at the surface and the Si substrate interface.
(Color online) Room-temperature PL and reflectance spectrum from the (a) etched sample A, and (b) and the etched sample B.
(Color online) (a) Normalized temperature-dependent PL spectra of sample B from 10 to 300 K. (b) Temperature-dependent peak wavelength (or energies) and solid lines are the fitting of the experimental data based on Eq. (5).
(Color online) I–V characteristics of the ITO/i-SiGe/Si HNR/n −-Si diode; the area of the diode is 4 × 4 mm2. The inset shows the schematic diagram of the device.
(Color online) Room-temperature EL spectra of the ITO/i-SiGe/Si HNR/n −-Si diode device under various current densities. The inset shows the integrated EL intensity of the devices as a function of injection current density.
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