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Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 μm
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Image of FIG. 1.
FIG. 1.

(Color online) AFM image of an uncapped sample of InAs/InP self-assembled QWRs.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The PL spectra of the QWRs emission at 12 K (grey solid filling) and 30 K (sparse red line filling). (b) Arrhenius plots corresponding to the families P1-P4, the experimental values obtained for P2, P3, and P4 are fitted to expression (1) and for P1 to expression (2), respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) System response (in shadow), low temperature PL transient at 1500 nm for family P1 (red dots) and best mono-exponential fit (red continuous line). PL decay time as a function of the emission energy (red spheres) and the corresponding PL spectrum (black continuous line) recorded at 12 K (b) and 80 K (c).

Image of FIG. 4.
FIG. 4.

(Color online) Temperature dependence of the PL decay time for families P1-P4: (a)-(d). Continuous lines stand for direct fits of the experimental data to the Lomascolo’s Model. In the case of results for PL decay times for families P3-P4, the fit is done on radiative lifetimes. The excitation power in the experiment was kept constant with temperature at 600 μW of irradiated power.


Generic image for table
Table I.

Experimental data and best fitting parameters of the PL integrated intensity at the different families (PL-Gaussian components) to Eqs. (1) and (2), respectively.

Generic image for table
Table II.

Best fitting parameters of TRPL measurements to Eq. (3).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 μm