1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Interface structure of the rubrene crystal field effect transistor
Rent:
Rent this article for
USD
10.1063/1.3661523
/content/aip/journal/jap/110/10/10.1063/1.3661523
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3661523
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of the back gate organic FET. (b) Transistor characteristics of a rubrene FET. (c) Photograph of one of our samples. The rubrene crystal is seen as quasi-hexagon, and the source and the drain electrodes are observed as horizontally long rectangles. The crystal size is 2–3 mm × 2–3 mm × several μm. (d) Schematic view of the optics we used.

Image of FIG. 2.
FIG. 2.

(Color online) The CTR profile along 00ζ rod. The gray squares show the CTR profile from the substrate, and the solid circles show the CTR profile from the rubrene FET with V G  = 0 V. The thick solid curve shows the simulated curve with the surface defined as an sudden termination of the bulk crystal structure (ideal surface, all the atoms have isotropic atomic displacement parameters of 3 Å2). Thin curves show the simulated intensity profile for structure models having large atomic displacement parameters (12 Å2) for the topmost molecules. Solid curve shows the calculation for unrelaxed case, whereas the dashed curve shows that for expanded topmost molecules by 1%.

Image of FIG. 3.
FIG. 3.

(Color online) The CTR profile along 00ζ rod measured at V G  = 0 V, −50 V, and −70 V. The dashed and solid lines show the calculated profiles for the ideal surface and the surface structure, respectively, reported in Ref. 5. The chain line shows the calculated profile for a 4-nm rough surface.

Image of FIG. 4.
FIG. 4.

Schematic view of the possible interfacial deformation of the crystal for the surface roughness of the substrate having (a) a short in-plane correlation length, and (b) a long in-plane correlation length.

Loading

Article metrics loading...

/content/aip/journal/jap/110/10/10.1063/1.3661523
2011-11-30
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface structure of the rubrene crystal field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3661523
10.1063/1.3661523
SEARCH_EXPAND_ITEM