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Interfaces in organic devices studied with resonant soft x-ray reflectivity
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10.1063/1.3661991
/content/aip/journal/jap/110/10/10.1063/1.3661991
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3661991

Figures

Image of FIG. 1.
FIG. 1.

(Color online) R-SoXR fits and data acquired at 285.6 eV for PFNBr/MEH-PPV bilayers, which had the PFNBr cast from methanol:THF mixtures as indicated. The numbers at the right of the reflectance traces are the layer thicknesses in nm as derived from the fits. Note the scaling by q4.

Image of FIG. 2.
FIG. 2.

(Color online) Reflectance acquired from (a) MEH-PPV single layer pre-annealed at 240 °C (270 eV), (b) as cast bilayer (285.6 eV), (c) as cast bilayer on pre-annealed MEH-PPV (285.6 eV), and (d) bilayer annealed at 230 °C. The numbers at the left of the reflectance traces are the layer thicknesses in nm as derived from the fits. Note the scaling by q4. Data offset for clarity.

Image of FIG. 3.
FIG. 3.

(Color online) Reflectance of PFNBr/MEH-PPV/PEDOT:PSS/ITO/glass multilayer at selected photon energies. Note the scaling by q4. Data offset for clarity.

Image of FIG. 4.
FIG. 4.

(Color online) Fits of multilayer data 284.6 and 285. 4 eV and simulation of 270 eV data. Note the scaling by q4. Data offset for clarity.

Image of FIG. 5.
FIG. 5.

(Color online) Representative R-SoXR data at 282.4 eV (open circle) and numerical fits (solid line) of Si/PFB/F8BT samples as a function of annealing. (1) As-prepared, (2) 100 °C, (3) 120 °C, (4) 140 °C, (5) 160 °C, and (6) 200 °C. The loss of the fringe modulations at higher annealing temperatures directly indicates an increase in polymer/polymer interfacial width. Note the scaling by q4. Data offset for clarity.

Image of FIG. 6.
FIG. 6.

(Color online) R-SoXR reflectance (open circle) and fits (solid line) of (1) PFB as-spun, (2) PFB 200 °C annealed, (3) F8BT as-spun, and (4) F8BT 200 °C annealed single layers. Data offset for clarity.

Image of FIG. 7.
FIG. 7.

(Color online) R-SoXR data acquired at a number of photon energies to show the selective sensitivity of the method to different interfaces for PS/P(NDI2OD-T2), PMMA/P(NDI2OD-T2), and CYTOP/P(NDI2OD-T2) bilayers at the carbon and fluorine absorption edges. Traces are offset for easy viewing. Data offset for clarity.

Image of FIG. 8.
FIG. 8.

(Color online) Data and fits for bilayers of: (1) CYTOP/P(NDI2OD-T2) at 688 eV; (2) CYTOP/P(NDI2OD-T2) at 285 eV; (3) PS/P(NDI2OD-T2) at 281.4 eV; and (4) PMMA/P(NDI2OD-T2) at 286.0 eV. Note that data and fits are scaled for better viewing in a single graph. Note the scaling by q4. Data offset for clarity.

Tables

Generic image for table
Table I.

Surface and interface roughness of PFNBr/MEH-PPV/Si bilayers and MEH-PPV reference layer as determined from fits shown in Figs. 1 and 2.

Generic image for table
Table II.

R-SoXR sensitivity to particular interface and dominant fringe spacing of R-SoXR data of PFNBr/MEH-PPV/PEDOT:PSS/ITO/glass multilayer device (see Fig. 3) as a function of photon energy; nominal layer thickness, and quantitative results of layer thickness. Shaded areas indicate no particular sensitivity to this layer. Unit for Δq of fringes spacing is nm−1.

Generic image for table
Table III.

Fitting results from R-SoXR measurements of PFB/F8BT/Si bilayers at 282.4 eV and 284 eV, assuming an error function interface profile.

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/content/aip/journal/jap/110/10/10.1063/1.3661991
2011-11-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfaces in organic devices studied with resonant soft x-ray reflectivity
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3661991
10.1063/1.3661991
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