Current density vs voltage for NH4OH, (NH4)2 S, or UV–S bonded GaAs/GaAs, and reference GaAs with AuGe/Ni/Au contacts on front and back: (a) annealed for 2 h at 400 °C, and (b) after additional rapid thermal processing at 600 °C for 2 min.
HRTEM of GaAs/GaAs interface annealed 2 h at 400 °C treated with (a) UV–S, and (b) (NH4)2S.
HRTEM of UV–S GaAs/GaAs interface annealed 2 h at 400 °C plus a 1-min rapid thermal anneal at 600 °C.
STEM image under Z-contrast conditions of GaAs/GaAs interface after 1-min 600 - °C rapid thermal anneal for (a) UV–S, and (b) NH4OH treatment.
Zero-bias dc conductance of wafer-bonded n-GaAs/n-GaAs vs inverse measurement temperature for samples that received 2-h 400- °C anneal plus 2-min RTA at 600 °C and the fitting of Eq. (1) to the data.
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