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Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes
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10.1063/1.3662488
/content/aip/journal/jap/110/10/10.1063/1.3662488
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662488
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Figures

Image of FIG. 1.
FIG. 1.

(a) Indium composition in AlInN layer, (b) XRC FWHMs in symmetrical reflection, and (c) XRC FWHMs in asymmetrical reflection, as a function of the growth temperature.

Image of FIG. 2.
FIG. 2.

Typical cross-sectional TEM image of AlInN/GaN structure with the V/III ratio of 8100.

Image of FIG. 3.
FIG. 3.

(Color online) AFM images of nearly lattice-matched AlInN/GaN structures with the V/III ratios of (a) 8100, (b) 12 200, and (c) 243 000. The scanning area is 3 × 3 μm2.

Image of FIG. 4.
FIG. 4.

(a) Typical cross-sectional SEM image of AlInN/GaN structure with the V/III ratio of 24 300. (b) AlInN growth rate as a function of the indium composition.

Image of FIG. 5.
FIG. 5.

PL spectra of nearly lattice-matched AlInN/GaN structure with the different V/III ratio.

Image of FIG. 6.
FIG. 6.

I-V characteristics for fabricated photodiodes at (a) forward bias and (b) reverse bias.

Image of FIG. 7.
FIG. 7.

Net carrier concentrations in AlInN layer as a function of the depth.

Image of FIG. 8.
FIG. 8.

Spectral responses for fabricated photodiodes.

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/content/aip/journal/jap/110/10/10.1063/1.3662488
2011-11-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662488
10.1063/1.3662488
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