(a) Indium composition in AlInN layer, (b) XRC FWHMs in symmetrical reflection, and (c) XRC FWHMs in asymmetrical reflection, as a function of the growth temperature.
Typical cross-sectional TEM image of AlInN/GaN structure with the V/III ratio of 8100.
(Color online) AFM images of nearly lattice-matched AlInN/GaN structures with the V/III ratios of (a) 8100, (b) 12 200, and (c) 243 000. The scanning area is 3 × 3 μm2.
(a) Typical cross-sectional SEM image of AlInN/GaN structure with the V/III ratio of 24 300. (b) AlInN growth rate as a function of the indium composition.
PL spectra of nearly lattice-matched AlInN/GaN structure with the different V/III ratio.
I-V characteristics for fabricated photodiodes at (a) forward bias and (b) reverse bias.
Net carrier concentrations in AlInN layer as a function of the depth.
Spectral responses for fabricated photodiodes.
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