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First-principles study of initial growth of GaXO layer on GaAs-β2(2 × 4) surface and interface passivation by F
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10.1063/1.3662892
/content/aip/journal/jap/110/10/10.1063/1.3662892
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662892
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/content/aip/journal/jap/110/10/10.1063/1.3662892
2011-11-29
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: First-principles study of initial growth of GaXO layer on GaAs-β2(2 × 4) surface and interface passivation by F
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662892
10.1063/1.3662892
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