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Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO2/TiN/MgO memristive device
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10.1063/1.3662922
/content/aip/journal/jap/110/10/10.1063/1.3662922
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662922
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The schematic diagram of the Ti/TiO2/TiN/MgO memory device. (b) Schematic diagram showing one of the high-density storage methods for Ti/TiO2/TiN/MgO. Ti, TiO2, and TiN could all be in situ grown by PAMBE with shadow masks.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD patterns of epitaxial films grown on MgO substrate and the bare MgO (100) substrate. (b)and(c) XPS spectra of Ti 2p and O 1s of TiO2 thin film, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) The bipolar switching characteristics I–V curves of the Ti/TiO2/TiN/MgO device, measured with (a) TiN electrode grounded (two abnormal regions were found in 2 V–3 V and −2 V to −3 V) and (b) Ti electrode grounded.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic diagrams of filament formation and fracture in the macroscopic point of view. (a) ON (LRS) state and (b) OFF (HRS) state. Note that the size and distribution of the filaments are simplified here.

Image of FIG. 5.
FIG. 5.

(Color online) Schematic diagrams of Set (a) and Reset (b) processes in the microscopic point of view. (a) Filaments formed in the TiO2 matrix act as conducting paths, corresponding to low resistance state. (b) Oxygen ions driven back from the interface neutralize oxygen vacancies, resulting in the filaments disrupting, which corresponds to high resistance state.

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/content/aip/journal/jap/110/10/10.1063/1.3662922
2011-11-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO2/TiN/MgO memristive device
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662922
10.1063/1.3662922
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