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Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution
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10.1063/1.3662929
/content/aip/journal/jap/110/10/10.1063/1.3662929
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662929
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sections of the structure of the vicinal Si(111) surface for the or directions. The sketch diagram shows the two different miscutting surfaces separated by the double dashed line. (b) Top view and (c) side view of the three-fold Si–Si bonds at the terrace and the net dipole at the step of the vicinal Si(111). The relative phase ψ 1 is also shown.

Image of FIG. 2.
FIG. 2.

(Color online) The resulting dipole and relative phase (ψ 1) at the step of the implanted vicinal Si(111). Most P atoms have not been activated in (a) and have been activated in (b).

Image of FIG. 3.
FIG. 3.

(Color online) ss-SHG intensity pattern for the vicinal Si(111) substrate without RTA and for samples for which RTA was performed at temperatures between 700–950 °C. The solid line was plotted using the fitting parameters.

Image of FIG. 4.
FIG. 4.

(Color online) a 3 ratio of the implanted vicinal Si(111) to the Si(111) substrate.

Image of FIG. 5.
FIG. 5.

(Color online) a 1 ratio of the implanted vicinal Si(111) to the Si(111) substrate.

Image of FIG. 6.
FIG. 6.

(Color online) ψ 1 of the implanted vicinal Si(111) substrate.

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/content/aip/journal/jap/110/10/10.1063/1.3662929
2011-11-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural evolution of implanted vicinal Si(111) during annealing via analysis of the dipole contribution
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/10/10.1063/1.3662929
10.1063/1.3662929
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