(Color online) Wafer curvature measurement (black dots) during growth of 21-periods InGaAs/GaAsP MQWs together with curvature simulations using Stoney’s equation (blue dotted line) and developed equation (red line).
(Color online) X-ray measurement (blue line) and fit (red line) of the grown MQWs structure in Fig. 1.
(Color online) Aseries of wafer curvature measurements with the MQWs’ average strain towards tensile (black dots), strain-balanced (blue dots), and compressive (green dots) directions, and fits (red line) for each measurement.
(Color online) Curvature transients (black dotted line) during growth of InGaAs/GaAsP MQWs with growth temperature (red line) variation.
Lattice constants and thermal expansion coefficients for GaAs, , and used for the calculation of curvature.
Properties of grown MQWs structures with different average strain directions obtained by ex situ XRD measurement.
Article metrics loading...
Full text loading...