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Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature
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10.1063/1.3663309
/content/aip/journal/jap/110/11/10.1063/1.3663309
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3663309
/content/aip/journal/jap/110/11/10.1063/1.3663309
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/content/aip/journal/jap/110/11/10.1063/1.3663309
2011-12-01
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3663309
10.1063/1.3663309
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