1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature
Rent:
Rent this article for
USD
10.1063/1.3663309
/content/aip/journal/jap/110/11/10.1063/1.3663309
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3663309

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Wafer curvature measurement (black dots) during growth of 21-periods InGaAs/GaAsP MQWs together with curvature simulations using Stoney’s equation (blue dotted line) and developed equation (red line).

Image of FIG. 2.
FIG. 2.

(Color online) X-ray measurement (blue line) and fit (red line) of the grown MQWs structure in Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Aseries of wafer curvature measurements with the MQWs’ average strain towards tensile (black dots), strain-balanced (blue dots), and compressive (green dots) directions, and fits (red line) for each measurement.

Image of FIG. 4.
FIG. 4.

(Color online) Curvature transients (black dotted line) during growth of InGaAs/GaAsP MQWs with growth temperature (red line) variation.

Tables

Generic image for table
Table I.

Lattice constants and thermal expansion coefficients for GaAs, , and used for the calculation of curvature.

Generic image for table
Table II.

Properties of grown MQWs structures with different average strain directions obtained by ex situ XRD measurement.

Loading

Article metrics loading...

/content/aip/journal/jap/110/11/10.1063/1.3663309
2011-12-01
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3663309
10.1063/1.3663309
SEARCH_EXPAND_ITEM