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Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
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10.1063/1.3665398
/content/aip/journal/jap/110/11/10.1063/1.3665398
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665398
/content/aip/journal/jap/110/11/10.1063/1.3665398
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/content/aip/journal/jap/110/11/10.1063/1.3665398
2011-12-01
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665398
10.1063/1.3665398
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