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Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
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10.1063/1.3665398
/content/aip/journal/jap/110/11/10.1063/1.3665398
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665398
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) AFM image of the as-grown Si-capped Ge QD sample; (b) and (c) the corresponding cross-sectional TEM and HRTEM images, respectively; (d) a stereo structural schematic illustration of the sample.

Image of FIG. 2.
FIG. 2.

(Color online) (a) AFM image of the sample annealed at 1000 °C. (b) The corresponding bright-field TEM image collected in STEM mode. (c) HRTEM image of one section of the annealing sample showing good crystallinity of the newly formed QDs. (d) HAADF of the annealed sample showing the Ge spatial distribution.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Raman spectra of the as-grown Si-capped Ge QD samples annealed at different temperatures. (b) Raman spectra of the as-grown Si-capped Ge QD samples annealed at 1000 °C in forming gas and mixed gas of 95% N2 and 5% O2, respectively, showing a totally different behavior compared with that in pure oxygen. (c) The STEM mode-collected bright-field TEM image of the as-grown Si-capped Ge QD sample annealed at 1000 °C in forming gas.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic illustrations of the evolution of as-grown Si-capped Ge QD sample with the temperature variation. (a) As-grown sample. (b) Annealed at low temperature. (c) Annealed at high temperature.

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/content/aip/journal/jap/110/11/10.1063/1.3665398
2011-12-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665398
10.1063/1.3665398
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