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Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation
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10.1063/1.3665643
/content/aip/journal/jap/110/11/10.1063/1.3665643
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665643

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM images of samples implanted at room temperature: (a) 2.5 × 1014 cm−2, (b) 5 × 1014 cm−2, (c) 1 × 1015 cm−2, (d) 2.5 × 1015 cm−2, (e) 5 × 1015 cm−2, and (f) 1 × 1016 cm−2; and samples implanted at −180 °C: (g) 2.5 × 1015 cm−2, (h) 5 × 1015 cm−2, and (i) 1 × 1016 cm−2.

Image of FIG. 2.
FIG. 2.

(a) k 3-weighted EXAFS spectra of GaSb recorded at the Ga K edge vs the photoelectron wavenumber k for various implant fluences at room temperature. (Note: The amplitude of all but the unimplanted spectrum has been scaled by the factors indicated in the figure.) (b) Corresponding Fourier transforms as a function of the non-phase-corrected radial distance R from the absorber (symbols) and fits (solid lines).

Image of FIG. 3.
FIG. 3.

(a) k 3-weighted EXAFS spectra of GaSb recorded at the Sb K edge vs the photoelectron wavenumber k for various implant fluences at room temperetaure. (Note: The amplitude of all but the unimplanted spectrum has been scaled by the factors indicated in the figure.) (b) Corresponding Fourier transforms as a function of the non-phase-corrected radial distance R from the absorber (symbols) and fits (solid lines).

Image of FIG. 4.
FIG. 4.

(a) Normalized XANES spectra recorded at the Ga K edge for Ga2O3 and GaSb for various implant fluences at room temperature. (b) XANES spectrum of GaSb implanted with 1 × 1016 cm−2 at room temperature (lines) and linear combination fit using the unimplanted GaSb and Ga2O3 spectra (symbols). The dashed lines show the spectra of unimplanted GaSb and Ga2O3. (c) Ga2O3 fraction as a function of implantation fluence for irradiation at room temperature and at −180 °C.

Image of FIG. 5.
FIG. 5.

(a) Ga–Sb bond length, and (b) Ga–Sb coordination number as a function of implantation fluence.

Image of FIG. 6.
FIG. 6.

(a) Sb–Sb bond length, and (b) Sb–Sb coordination number as a function of implantation fluence.

Tables

Generic image for table
Table I.

69Ga implant fluences (in cm−2) for the multiple-energy implant sequences.

Generic image for table
Table II.

Refined fitting parameters from EXAFS analysis of the first coordination shell as a function of ion irradiation fluence. N, r, and σ2 are the coordination number, bond length, and Debye-Waller factor, respectively.

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/content/aip/journal/jap/110/11/10.1063/1.3665643
2011-12-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665643
10.1063/1.3665643
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