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Linear and nonlinear intersubband optical properties of Si quantum dot embedded in oxide, nitride, and carbide matrix
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10.1063/1.3665687
/content/aip/journal/jap/110/11/10.1063/1.3665687
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665687
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The variation of the energy difference of the excited (1p) and the ground (1s) states as a function of dot radius.

Image of FIG. 2.
FIG. 2.

The variation of linear, nonlinear, and total photoabsorption coefficient as a function of the incident photon energy at intensity I = 1.0 × 1011 W/m2 and dot radius R = 28 Å.

Image of FIG. 3.
FIG. 3.

The variation of the total photoabsorption coefficient as a function of photon energy at different values of the dot radii and intensity I = 1.0 × 1011 W/m2.

Image of FIG. 4.
FIG. 4.

The variation of the total photoabsorption coefficient as a function of photon energy at different values of intensities and dot radius R = 28 Å.

Image of FIG. 5.
FIG. 5.

The variation of linear, nonlinear, and total change in refractive index as a function of the incident photon energy at intensity I = 1.0 × 1011 W/m2 and dot radius R = 28 Å.

Image of FIG. 6.
FIG. 6.

The variation of total change in refractive index as a function of the incident photon energy at different values of dot radii and intensity I = 1.0 × 1011 W/m2.

Image of FIG. 7.
FIG. 7.

The variation of total change in refractive index as a function of the incident photon energy at different values of intensities and dot radius R = 28 Å.

Image of FIG. 8.
FIG. 8.

The variation of third order optical susceptibility as a function of the incident photon energy at different values of intensities and dot radius R = 28 Å.

Image of FIG. 9.
FIG. 9.

The variation of the total photoelectric cross section from the 1s state as a function of incident photon energy.

Image of FIG. 10.
FIG. 10.

The variation of the (a) absorption coefficient, (b) change in refractive index, and (c) nonlinear susceptibility as a function of the incident photon energy at intensity I = 1.0 × 1011 W/m2 and dot radius R = 28 Å without the local field factor.

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/content/aip/journal/jap/110/11/10.1063/1.3665687
2011-12-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Linear and nonlinear intersubband optical properties of Si quantum dot embedded in oxide, nitride, and carbide matrix
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665687
10.1063/1.3665687
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