(Color online) (a) XRD patterns of N-600, Cr-500, Cr-600, and Cr-700, respectively, in which the peaks exhibit a β-phase Ga2O3 with a preferred orientation of (400). (b) Typical RS I−V curves of N-600 (solid circle), the Ti/Cr:Ga2O3/Pt (empty circle) devices without RTA and Cr-500 (solid triangle), where the forming processes are also demonstrated. (c) The Rini of N-600 and the Ti/Cr:Ga2O3/Pt devices with various RTA temperatures vs device area. (d) 10th, 100th, and 500th I−V curves of Cr-600 during continuous RS cycles at room temperature. The inset shows the R ini vs temperature relationship for the Cr-600.
(Color online) Ga 2p 3/2 spectra of (a) N-600, (b) Cr-500, (c) Cr-600, and (d) Cr-700. (e) Cr 2p 1/2 and Cr 2p 3/2 in various positions (1, 2, and 3) within the Cr-600.
I−V characteristics of both (a) positive (b) negative bias regions of N-600, the Ti/Cr:Ga2O3/Pt without RTA, and Cr-600 devices plotted in a double-logarithmic scale.
A number of electrical characteristics of N-600 and the Ti/Cr:Ga2O3/Pt devices with 600 °C RTA under various thicknesses.
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