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Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
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10.1063/1.3665871
/content/aip/journal/jap/110/11/10.1063/1.3665871
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665871

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) XRD patterns of N-600, Cr-500, Cr-600, and Cr-700, respectively, in which the peaks exhibit a β-phase Ga2O3 with a preferred orientation of (400). (b) Typical RS IV curves of N-600 (solid circle), the Ti/Cr:Ga2O3/Pt (empty circle) devices without RTA and Cr-500 (solid triangle), where the forming processes are also demonstrated. (c) The Rini of N-600 and the Ti/Cr:Ga2O3/Pt devices with various RTA temperatures vs device area. (d) 10th, 100th, and 500th IV curves of Cr-600 during continuous RS cycles at room temperature. The inset shows the R ini vs temperature relationship for the Cr-600.

Image of FIG. 2.
FIG. 2.

(Color online) Ga 2p 3/2 spectra of (a) N-600, (b) Cr-500, (c) Cr-600, and (d) Cr-700. (e) Cr 2p 1/2 and Cr 2p 3/2 in various positions (1, 2, and 3) within the Cr-600.

Image of FIG. 3.
FIG. 3.

IV characteristics of both (a) positive (b) negative bias regions of N-600, the Ti/Cr:Ga2O3/Pt without RTA, and Cr-600 devices plotted in a double-logarithmic scale.

Tables

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Table I.

A number of electrical characteristics of N-600 and the Ti/Cr:Ga2O3/Pt devices with 600 °C RTA under various thicknesses.

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/content/aip/journal/jap/110/11/10.1063/1.3665871
2011-12-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3665871
10.1063/1.3665871
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