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Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
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10.1063/1.3668117
/content/aip/journal/jap/110/11/10.1063/1.3668117
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3668117

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The schematics of 3-nm In0.325Ga0.675N QW with In0.15Ga0.85N barriers on In0.15Ga0.85N substrate with electron wavefunction EC1 and hole wave function HH1 and (b) electrostatic field in the InxGa1-xN QW with In0.15Ga0.85N barriers on In0.15Ga0.85N substrate as a function of In-content of the QW.

Image of FIG. 2.
FIG. 2.

(Color online) Spontaneous emission spectrum for both InxGa1-xN QWs with In0.15Ga0.85N barriers on the In0.15Ga0.85N substrate and conventional InyGa1-yN QWs with GaN barriers on the GaN substrate for green and yellow spectra regimes at n = 1 × 1019 cm−3 at room temperature.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of R sp as a function of carrier density for (a) In0.325Ga0.675N QW/In0.15Ga0.85N substrate and conventional In0.3Ga0.7N QW/GaN substrate and (b) In0.35Ga0.65N QW/In0.15Ga0.85N substrate and conventional In0.322Ga0.678N QW/GaN substrate.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Spontaneous emission spectrum for both InxGa1-xN QWs/In0.15Ga0.85N substrate from blue up to red spectral regimes at n = 1 × 1019 cm−3 at room temperature and (b) comparison of R sp as a function of carrier density for In0.4Ga0.6N QWs/In0.15Ga0.85N substrate and conventional In0.368Ga0.632N QWs/GaN substrate.

Image of FIG. 5.
FIG. 5.

(Color online) Spontaneous emission spectrum for In0.3Ga0.7N QW on InyGa1-yN substrates (y = 5% - 20%) at n = 1 × 1019 cm−3 at room temperature.

Image of FIG. 6.
FIG. 6.

(Color online) Comparison of R sp as a function of carrier density for In0.3Ga0.7N QW with InyGa1-yN substrates (y = 5% – 20%).

Image of FIG. 7.
FIG. 7.

(Color online) Peak emission wavelength as a function of R sp for In0.3Ga0.7N QW with InyGa1-yN substrates (y = 5% – 20%) at room temperature.

Tables

Generic image for table
Table I.

The transition energy blue-shifts for In0.3Ga0.7N QW on different ternary InyGa1- yN substrates (y = 5% − 20%).

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/content/aip/journal/jap/110/11/10.1063/1.3668117
2011-12-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/11/10.1063/1.3668117
10.1063/1.3668117
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