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Diversity of electronic transitions and photoluminescence properties in nanocrystalline Mn/Fe-doped tin dioxide semiconductor films: An effect from oxygen pressure
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10.1063/1.3669374
/content/aip/journal/jap/110/12/10.1063/1.3669374
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669374

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The XRD patterns of the SnTMO (TM: Mn or Fe) films with different oxygen pressure. The diffraction peak at about 18.4° in the SnMnO films with the oxygen pressure of 10−2 and 10−1 Pa, ascribed to the tetragonal phase of SnO, is remarked by label (*). The inset shows the variation of the -axis lattice constants evaluated from the diffraction peak (110) as the oxygen pressure.

Image of FIG. 2.
FIG. 2.

(a) and (b) Surface and (c) and (d) cross-sectional SEM images of the Mn and Fe doped SnO films grown under oxygen pressure of 10−1 Pa, respectively. Note that the given scales in the pictures (b) and (d) are 1 μm and 500 nm, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) XPS spectra of the (a) Sn 3d, (b) Mn 2p, and (c) Fe 2p regions for the SnTMO films prepared with oxygen pressure of 10−1 Pa. (d), (e), and (f) Oxygen pressure dependence of the corresponding binding energy positions.

Image of FIG. 4.
FIG. 4.

(Color online) O 1s reference spectra of the SnMnO (left) and SnFeO (right) films as a function of oxygen pressure, respectively.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Experimental infrared reflectance spectrum (dotted line) and the best-fit result (solid line) of the SnMnO film grown under 10−1 Pa. The phonon modes can be clearly assigned by the dashed lines. (b) and (c) An enlarged frequency region of 550–650 cm−1 from the experimental reflectance spectra for the SnTMO (TM: Mn or Fe) films. (d) and (e) The doping effects on the optical functions of the SnTMO films deposited under the oxygen pressure of 10−1 Pa. The horizontal coordinate is the logarithmic unit to emphasize the lattice vibration region. (f) The corresponding variations with the oxygen pressure for the highest frequency (TO) phonon modes.

Image of FIG. 6.
FIG. 6.

(Color online) Experimental (dotted lines) and best-fit (solid lines) transmittance spectra taken from the SnTMO (TM: Mn or Fe) films with the oxygen pressure of 10−1 Pa. For clarity, the insets exhibit all experimental transmittance spectra of the films deposited under different oxygen pressure from ultraviolet to near-infrared photon energy region.

Image of FIG. 7.
FIG. 7.

(Color online) The left panel shows the refractive index and the extinction coefficient κ for the SnTMO (TM: Mn or Fe) films grown under the oxygen pressure of 10−1 Pa. The right panel shows the variation trends of the electronic transition energies from the Tauc-Lorentz’s parameters with the oxygen pressure.

Image of FIG. 8.
FIG. 8.

(Color online) A three peak fitting of the photoluminescence spectra for the SnTMO (TM: Mn or Fe) films grown under different oxygen pressure. Note that some spectral lineshapes are enlarged by several times for a comparison.

Image of FIG. 9.
FIG. 9.

(Color online) The oxygen pressure dependence of photoluminescence intensities and peak positions for the SnTMO (TM: Mn or Fe) films. It indicates that there are different variation trends for Mn or Fe doped SnO materials with the oxygen pressure.

Tables

Generic image for table
Table I.

Comparison of binding energies from Sn 3d, O 1s, and TM 2p for various oxygen pressures in the SnTMO (TM: Mn or Fe) films and the peak positions of photoluminescence spectra are determined from the Gaussian fitting.

Generic image for table
Table II.

The Lorentz multi-oscillator parameter values for the SnTMO (TM: Mn or Fe) films with the varied oxygen pressure are extracted from the best fitting to infrared reflectance spectra in Fig. 5 .

Generic image for table
Table III.

The Tauc-Lorentz’s parameter values for the SnTMO (TM: Mn or Fe) films are determined from the simulation to ultraviolet-near-infrared transmittance spectra in Fig. 6 .

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/content/aip/journal/jap/110/12/10.1063/1.3669374
2011-12-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diversity of electronic transitions and photoluminescence properties in nanocrystalline Mn/Fe-doped tin dioxide semiconductor films: An effect from oxygen pressure
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669374
10.1063/1.3669374
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