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Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
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10.1063/1.3669377
/content/aip/journal/jap/110/12/10.1063/1.3669377
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669377
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic structure of UV-LEDs. The inset shows the TEM images within GMTL.

Image of FIG. 2.
FIG. 2.

SEM micrographs of the (a) as-grown GMTL and n-AlGaN layer with different overgrowth times (b) 10, (c) 20, (d) 30, (e) 60 min, respectively.

Image of FIG. 3.
FIG. 3.

Typical plane-view SEM micrographs of etch pit density with KOH etched n-AlGaN surface (a) without GMTL, (b) with GMTL.

Image of FIG. 4.
FIG. 4.

(Color online) Internal quantum efficiency of LEDs at 20 K and RT as a function of excitation carrier density.

Image of FIG. 5.
FIG. 5.

(Color online) PL spectra of G-LED with three different excitation carrier densities at 20 K. In the inset, PL spectra of G-LED with three different excitation carrier densities at RT.

Image of FIG. 6.
FIG. 6.

(Color online) Forward-bias I-V characteristics of the C-LEDs and G-LEDs. The inset shows the reverse-bias I-V characteristics of the C-LEDs and G-LEDs.

Image of FIG. 7.
FIG. 7.

(Color online) LED output power as functions of injection current of G-LED and C-LED. In the inset, photograph of the G-LEDs chip lighting on at 350 mA.

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/content/aip/journal/jap/110/12/10.1063/1.3669377
2011-12-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669377
10.1063/1.3669377
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