(Color online) Schematic structure of UV-LEDs. The inset shows the TEM images within GMTL.
SEM micrographs of the (a) as-grown GMTL and n-AlGaN layer with different overgrowth times (b) 10, (c) 20, (d) 30, (e) 60 min, respectively.
Typical plane-view SEM micrographs of etch pit density with KOH etched n-AlGaN surface (a) without GMTL, (b) with GMTL.
(Color online) Internal quantum efficiency of LEDs at 20 K and RT as a function of excitation carrier density.
(Color online) PL spectra of G-LED with three different excitation carrier densities at 20 K. In the inset, PL spectra of G-LED with three different excitation carrier densities at RT.
(Color online) Forward-bias I-V characteristics of the C-LEDs and G-LEDs. The inset shows the reverse-bias I-V characteristics of the C-LEDs and G-LEDs.
(Color online) LED output power as functions of injection current of G-LED and C-LED. In the inset, photograph of the G-LEDs chip lighting on at 350 mA.
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