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Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
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10.1063/1.3669377
/content/aip/journal/jap/110/12/10.1063/1.3669377
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669377
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/content/aip/journal/jap/110/12/10.1063/1.3669377
2011-12-20
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669377
10.1063/1.3669377
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