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Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
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10.1063/1.3669405
/content/aip/journal/jap/110/12/10.1063/1.3669405
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669405
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) C-V plots at 1 MHz and 295 K for the studied Si/SiO2/Al and Si/SiO2/SiNx/Al MIS capacitors. Measurements were carried out in both directions, while only the data from the forward direction are plotted herein for clarity. The thickness of the deposited SiO2 layer is estimated to be around 100 nm. F and nF refer to fired and non-fired layers, respectively, and +Al to layers fired when already coated with Al.

Image of FIG. 2.
FIG. 2.

(Color online) Dit spectra for the Si/SiO2/Al and Si/SiO2/SiNx/Al MIS capacitors derived from DLTS frequency scans. The hole capture cross section of sp ∼ 3 × 10–17 cm2 is used in the transformations, extracted from the boron doping level in Si bulk, a filling pulse time of 10−7 s, and the thermal velocity at room temperature of 107 cm/s.

Image of FIG. 3.
FIG. 3.

(Color online) Normalized DLTS signals against filling pulse duration for the Si/SiO2/Al and Si/SiO2/SiNx/Al MIS capacitors during the measurements. The recorded DLTS amplitudes are normalized by the steady state capacitance corresponding with reverse bias and Al contact area.

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/content/aip/journal/jap/110/12/10.1063/1.3669405
2011-12-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3669405
10.1063/1.3669405
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