(Color online) Experimental and simulated HRXRD profiles for (0 0 4) symmetric reflection of InP/GaAs superlattice structure SL3. Zeroth (S0) and first order (S−1, S1) superlattice peaks from the superlattice structures are also marked. Profiles have been shifted in the vertical direction for clarity in viewing. Inset shows the cross-sectional TEM micrograph for the same sample. Seven InP QWs separated by GaAs are also marked.
(Color online) The 10 K PR spectra for all the superlattice samples. Data with symbols show the Aspnes line shape fitting. The feature from the superlattice structure is marked as “SL.”
(Color online) Band diagram of InP/GaAs type-II superlattice structure for unstrained and strained InP QWs, shown by dotted and solid lines, respectively. The superlattice feature observed in the PR spectra is marked as “SL.” All values are shown in eV at 10 K.
(Color online) Temperature dependent PR spectra for superlattice samples (a) SL3 and (b) SL4. The feature from the superlattice structure is marked as “SL.” Symbols indicate the Aspnes line shape fitting.
(Color online) (a) Variation of the broadening parameter of superlattice features with the LO phonon population density. (b) Behavior of transition energies of superlattice features with respect to temperature along with the Bose-Einstein (BE) fitting. (c) Variation of E(T) − EB + aB for superlattices, GaAs, and InP materials as a function of temperature.
(Color online) RT PR spectra from superlattice structures SL3 and SL4 indicating the FKOs. Inset depicts the graph between 4/3π [En − Eg ]3/2 and n for both superlattices.
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