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Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer
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10.1063/1.3672448
/content/aip/journal/jap/110/12/10.1063/1.3672448
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3672448
/content/aip/journal/jap/110/12/10.1063/1.3672448
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/content/aip/journal/jap/110/12/10.1063/1.3672448
2011-12-29
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3672448
10.1063/1.3672448
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