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Electric field and stepped barrier effects on hydrogenic impurity states in semiconducting stepped quantum wells
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10.1063/1.3672818
/content/aip/journal/jap/110/12/10.1063/1.3672818
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3672818
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The conduction band edge and the ground-state electron wave function in ZB GaN/In0.3Ga0.7N/In0.1Ga0.9N/GaN stepped QWs with a well width Lw  = Ls  = 5 nm under different applied electric fields F: (a) F = 0, (b) F = 300 kV/cm, and (c) F = − 300 kV/cm.

Image of FIG. 2.
FIG. 2.

(Color online) The ground-state donor binding energy as a function of the applied electric field F in ZB GaN/In0.3Ga0.7N/InxGa1−xN/GaN stepped QWs (Lw  = Ls  = 5 nm) for different impurity positions and In content x. Curves a, b, c, d, and e correspond to the impurities located at , , , , and , respectively.

Image of FIG. 3.
FIG. 3.

(Color online) The ground-state donor binding energy as a function of the impurity position in ZB GaN/In0.3Ga0.7N/InxGa1−xN/GaN stepped QWs with Lw  = Ls  = 5 nm for different electric fields F and different In contents (a), (b), and (c). Curves a, b, c, d, and e correspond to , − 150, 0, 150, and 300 kV/cm, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) The ground-state donor binding energy as a function of the In content x in ZB GaN/In0.3Ga0.7N/InxGa1−xN/GaN stepped QWs with Lw  = Ls  = 5 nm for different impurity positions and electric field cases. Curves a, b, c, d, and e are the same as in Fig. 2.

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/content/aip/journal/jap/110/12/10.1063/1.3672818
2011-12-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric field and stepped barrier effects on hydrogenic impurity states in semiconducting stepped quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3672818
10.1063/1.3672818
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