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Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers
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10.1063/1.3672819
/content/aip/journal/jap/110/12/10.1063/1.3672819
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3672819
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The TE optical gain of the SCH QW lasers as a function of the carrier injection density at different temperatures (300, 350, and 400 K).

Image of FIG. 2.
FIG. 2.

Quasi-Fermi levels of the SCH QW lasers as a function of the carrier injection density at different temperatures (300, 350, and 400 K) for (a) the conduction band and (b) the valence band.

Image of FIG. 3.
FIG. 3.

The modal gain of the TE mode as a function of for the SCH QW lasers at different temperatures (300, 350, and 400 K).

Image of FIG. 4.
FIG. 4.

The threshold carrier density and carrier density of SCH layer at threshold as a function of temperature for the SCH QW lasers. The solid line is for the threshold carrier density . The dashed (dotted) line is for the electron (hole) density of SCH layer at threshold.

Image of FIG. 5.
FIG. 5.

The calculated dependence of the threshold current density on temperature as well as the experimental data of Ref. 9 for the SCH QW lasers.

Image of FIG. 6.
FIG. 6.

, , and of the SCH QW lasers as a function of temperature.

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/content/aip/journal/jap/110/12/10.1063/1.3672819
2011-12-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/12/10.1063/1.3672819
10.1063/1.3672819
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