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Synthesis of submicron metastable phase of silicon using femtosecond laser-driven shock wave
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the procedure for sample preparation and geometry of the XRD measurements. A femtosecond laser pulse irradiated the silicon surface. The spot was measured by the XRD after the sample preparation.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD pattern obtained by varying the detector angle with keeping constant the incident angle. X-ray exposure time is 10 s/step. Percentage attached to diffraction indicates difference between observed and theoretical d-spacings. (b) The curve indicates the Lorentzian profile.

Image of FIG. 3.
FIG. 3.

(Color) 2 D-XRD mapping result fixing the detector angle to 47.76 degree which corresponds to the Bragg angle of Si-VIII (423). A schematic illustration of the measured region is shown in the inset. The Si-VIII phase exists in the red-colored area. The Si-VIII grain exists at a depth of a few microns from the laser irradiated surface. A distance of each point of measurements is 0.5 μm vertically and horizontally.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synthesis of submicron metastable phase of silicon using femtosecond laser-driven shock wave