(Color online) Angle-resolved B1s and N1s XANES spectra of HOPBN measured in three consecutive stages: (a) clean sample, (b) Ar+ sputtered in ultrahigh vacuum, and (c) after subsequent air exposure. The XANES spectra of polycrystalline h-BN powder (bottom panels) and a defective h-BN thin film (top panels) are shown as references.
Grazing incidence O1s XANES spectra of the clean HOPBN and the Ar+ sputtered HOPBN exposed to air. A B2O3 reference spectrum from Ref. 56 is depicted for comparison purposes.
Deconvolution into five Gaussian components (solid lines) of the B(1s→π*) XANES excitonic transitions (dots) recorded at 0°, 55° and 75° incidence after air exposure of the Ar+ sputtered HOPBN sample.
Angle dependence of the intensity of peaks V-Z observed in the Ar+ sputtered HOPBN sample after air exposure.
Deconvolution into seven Gaussian components (solid lines) of the B(1s → π*) XANES excitonic transitions (dots) of BCxN (0 < x < 4) thin films recorded at 55° incidence.
Energy position of B(1s → π*) XANES transitions assigned to different sp 2-boron bonding environments in BCxN compounds.
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