1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
Rent:
Rent this article for
USD
10.1063/1.3605527
/content/aip/journal/jap/110/2/10.1063/1.3605527
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/2/10.1063/1.3605527
/content/aip/journal/jap/110/2/10.1063/1.3605527
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/110/2/10.1063/1.3605527
2011-07-20
2014-09-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/2/10.1063/1.3605527
10.1063/1.3605527
SEARCH_EXPAND_ITEM