(Color online) Comparison between the measured (black circle) J-V curve and the cubic law (J = a · V3 + b-V) fitting (red line) of the SnO2:F/p-type aSi:H/Mo structure at 30 °C. The samples have a diameter of 0.02 cm. In the inset is shown the structure under investigation and the diode configuration. The positive bias is applied to Molybdenum.
(Color online) Theoretical C-V curves normalized to the value at 0 V obtained by using back to back model and for three different cases. If Vbi, 1 is higher (blue) or smaller (red) than Vbi ,2 the capacitance decreases or increases, respectively. If Vbi ,1 is equal to Vbi, 2 the capacitance is almost constant.
(Color online) Comparison between the fitting (lines) by using C-V back to back model and the measurements (circles) capacitance of a sample of 0.02 diameter at different temperatures (from 303 to 343 K) by using a doping density extracted from J-V simulation with a barrier height of 0.49 eV at the Mo/p-type a-Si:H interface.
(Color online) Comparison between simulated J-V curves with (black) and without (red) the activation of the option “allow tunneling to traps” (TT) in SCAPS software of the SnO2:F/p-type a-Si:H heterojunction in reverse polarization.
(Color online) Comparison between the measured (black circles) and the simulated (lines) J-V curve at T = 313 K of the SnO2:F/p-type aSi:H/Mo structures, for different barrier heights. The values of the a-Si:H doping and of the interface defect density are NA = 5.2 × 1018 cm–3 and NG , int = 4.1 × 1013 cm−2, respectively.
(Color online) Simulated (red lines) and measured (black circles) J-V curves for negative voltages of the p-type a-Si:H/SnO2:F heterojunction at different temperatures (from 303 to 353 K). The simulation curve are obtained by using a barrier height of 0.49 eV at the Mo/p-type a-Si:H, a interface defect density of 4.0 × 1013 cm−2 at the SnO2:F/p-type a-Si:H and a doping density of the p-type a-Si:H of 5.6 × 1018 cm−3. The arrow indicates the increase of the temperatures.
(Color online) Simulated Current Density at V = −0.2 V and T = 303 K for different width Δ E (circle black) and position ED − EV (square black) and for different defect density Ng (circle red) of the heterostructure SnO2:F/p-type a-Si:H/Mo. In blue the measured current density J at V = −0.2 V and T = 303 K.
(Color online) Simulated energy band diagram of the heterojunctions SnO2:F/p-type a-Si:H with a Gaussian surface state density of 4.0 × 1013 cm−2 , 0.4 eV above the valence bandedge of the p-type a-Si:H layer at T = 30 °C and with a doping density of 5.6 × 1018 cm−3.
SCAPS 2.9.03 input parameters.
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