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Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction
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Image of FIG. 1.
FIG. 1.

(Color online) Comparison between the measured (black circle) J-V curve and the cubic law (J = a · V3 + b-V) fitting (red line) of the SnO2:F/p-type aSi:H/Mo structure at 30 °C. The samples have a diameter of 0.02 cm. In the inset is shown the structure under investigation and the diode configuration. The positive bias is applied to Molybdenum.

Image of FIG. 2.
FIG. 2.

(Color online) Theoretical C-V curves normalized to the value at 0 V obtained by using back to back model and for three different cases. If Vbi, 1 is higher (blue) or smaller (red) than Vbi ,2 the capacitance decreases or increases, respectively. If Vbi ,1 is equal to Vbi, 2 the capacitance is almost constant.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison between the fitting (lines) by using C-V back to back model and the measurements (circles) capacitance of a sample of 0.02 diameter at different temperatures (from 303 to 343 K) by using a doping density extracted from J-V simulation with a barrier height of 0.49 eV at the Mo/p-type a-Si:H interface.

Image of FIG. 4.
FIG. 4.

(Color online) Comparison between simulated J-V curves with (black) and without (red) the activation of the option “allow tunneling to traps” (TT) in SCAPS software of the SnO2:F/p-type a-Si:H heterojunction in reverse polarization.

Image of FIG. 5.
FIG. 5.

(Color online) Comparison between the measured (black circles) and the simulated (lines) J-V curve at T = 313 K of the SnO2:F/p-type aSi:H/Mo structures, for different barrier heights. The values of the a-Si:H doping and of the interface defect density are NA = 5.2 × 1018 cm–3 and NG , int = 4.1 × 1013 cm−2, respectively.

Image of FIG. 6.
FIG. 6.

(Color online) Simulated (red lines) and measured (black circles) J-V curves for negative voltages of the p-type a-Si:H/SnO2:F heterojunction at different temperatures (from 303 to 353 K). The simulation curve are obtained by using a barrier height of 0.49 eV at the Mo/p-type a-Si:H, a interface defect density of 4.0 × 1013 cm−2 at the SnO2:F/p-type a-Si:H and a doping density of the p-type a-Si:H of 5.6 × 1018 cm−3. The arrow indicates the increase of the temperatures.

Image of FIG. 7.
FIG. 7.

(Color online) Simulated Current Density at V = −0.2 V and T = 303 K for different width Δ E (circle black) and position ED − EV (square black) and for different defect density Ng (circle red) of the heterostructure SnO2:F/p-type a-Si:H/Mo. In blue the measured current density J at V = −0.2 V and T = 303 K.

Image of FIG. 8.
FIG. 8.

(Color online) Simulated energy band diagram of the heterojunctions SnO2:F/p-type a-Si:H with a Gaussian surface state density of 4.0 × 1013 cm−2 , 0.4 eV above the valence bandedge of the p-type a-Si:H layer at T = 30 °C and with a doping density of 5.6 × 1018 cm−3.


Generic image for table
Table I.

SCAPS 2.9.03 input parameters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction