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Electrical and optical properties of transparent conducting In4+xSn3−2xSbxO12 thin films
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10.1063/1.3605552
/content/aip/journal/jap/110/3/10.1063/1.3605552
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3605552

Figures

Image of FIG. 1.
FIG. 1.

Pawley fit of the x-ray diffraction profile of the (a) In4Sn3O12 film and (b) In5SnSbO12 film to the space group . The experimental and calculated diffraction profiles are shown as data points and a line, respectively. The calculated positions of the reflections are shown as ticks. The difference curve is shown underneath the main plot. [(a): residuals; Rwp = 4.81%, Rexp = 7.26%, Rp = 5.45%, goodness-of-fit, 1.51; (b): residuals; Rwp = 6.14%, Rexp = 4.22%, Rp = 4.79%, goodness-of-fit, 1.46].

Image of FIG. 2.
FIG. 2.

(Color online) (a) Constrained peak fitting of Sb 3d (solid line, green online) and O 1s (dashed line, red online) core region to deconvoluted O 1s and Sb 3d 5/2 peaks shown for the film of nominal composition, In4.25Sn2.5Sb0.5O12. (b) Surface compositions as a function of composition (x) for films of the In4 + xSn3−2xSbxO12 solid solution. The lines represent the nominal stoichiometric variation of O (solid), Sn (dashed), In (dot-dashed) and Sb (dot-dot-dashed).

Image of FIG. 3.
FIG. 3.

(Color online) Variation of (a) carrier concentration and (b) carrier mobility as a function of temperature and composition for the In4−xSn3−2xSbxO12 films.

Image of FIG. 4.
FIG. 4.

(Color online) Variation of normalized electrical resistivity as a function of temperature and composition for the In4−xSn3−2xSbxO12 films. The inset shows the log ρ vs T −1/4 plot.

Image of FIG. 5.
FIG. 5.

(Color online) Optical transmission data for In4−xSn3−2xSbxO12 films (solid lines) and modeling results (dotted lines).

Image of FIG. 6.
FIG. 6.

(Color online) Square of the absorption coefficient (αhν)2 as a function of photon energy for In4−xSn3−2xSbxO12 films. The inset shows the onset of the direct allowed optical interband transition determined from linear extrapolation of the absorption coefficient to the abscissa.

Tables

Generic image for table
Table I.

Lattice parameters, crystallite size, and strain for In(4+x)Sn(3−2x)Sb(x)O12 films.

Generic image for table
Table II.

Summary of the room temperature electrical transport properties of In4+xSn3−2xSbxO12 films; values for electron effective masses m*/m 0 and scattering relaxation time τ are calculated for the ionized impurity scattering model (r = 2). E g is the optical band gap of nominally undoped films calculated using Eq. (4).

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/content/aip/journal/jap/110/3/10.1063/1.3605552
2011-08-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and optical properties of transparent conducting In4+xSn3−2xSbxO12 thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3605552
10.1063/1.3605552
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