Schematic illustration of the relaxed Si0.2Ge0.8 (50 nm)/compressively s-Ge isotope SL (60 nm)/relaxed Si0.2Ge0.8 (50 nm) heterostructures fabricated in this work.
Intensity peaks of the Si substrate, relaxed SiGe VS, and compressively s-Ge layer examined with asymmetrical (224) RSM using the XRD system (a) before, and (b) after annealing at 550 °C for 6 h.
SIMS and simulated depth profiles of 74Ge in the relaxed Si0.2Ge0.8/s-Ge isotope SL/relaxed Si0.2Ge0.8 heterostructures. The dashed line, open circles, open squares, and open triangles represent the SIMS depth profiles before and after annealing at 550 °C for 1, 3, and 6 h, respectively. The solid curves are the simulation results.
Temperature dependences of Ge self-diffusivities in compressively strained and unstrained Ge. The open squares and open circles, respectively, represent the temperature dependences of Ge self-diffusivities in compressively strained and unstrained Ge obtained in this work. The solid lines show the best fits based on an Arrhenius expression. The dashed line represents the temperature dependence of the Ge self-diffusivities in unstrained Ge reported in Ref. 19.
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