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Fast micro Hall effect measurements on small pads
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10.1063/1.3610505
/content/aip/journal/jap/110/3/10.1063/1.3610505
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3610505

Figures

Image of FIG. 1.
FIG. 1.

Illustration of the four different probe configurations (A, A′, B, and B′) used for M4PP micro Hall effect measurements.

Image of FIG. 2.
FIG. 2.

The four geometries (the infinite strip, the vertical semi-infinite strip VSIS, the horizontal semi-infinite strip HSIS, and the square) studied using conformal mapping.

Image of FIG. 3.
FIG. 3.

(Color online) Relative difference (in %) between R P obtained from numerical mapping of a 3.5 × 3.5 s 2 square and R P obtained from analytical mappings of infinite and semi-infinite strips as a function of normalized position, v/s.

Image of FIG. 4.
FIG. 4.

(Color online) Normalized absolute difference (in %) between ΔR BB′ obtained from numerical mapping of a 3.5 ×3.5 s 2 square and ΔR BB′ obtained from analytical mappings of infinite and semi-infinite strips as a function of normalized position, v/s. The values shown are normalized by R H. Note that the results for the infinite strip and HSIS cannot be distinguished.

Image of FIG. 5.
FIG. 5.

(Color online) Schematic cross-section of the two shallow trench isolated samples (STI) with and without the absorber layer (400 nm thick). The SiO2 layer is 330 ± 60 nm thick. The Applied Materials laser annealer with a 808 nm diode bar laser has a 75 μm wide beam in the scan direction, while it is much wider in the orthogonal direction.

Image of FIG. 6.
FIG. 6.

M4PP engaged on a 70 × 70 μm2 pad. The four pins to the left are the M4PP electrodes, while the pin to the right is part of the strain gauge used for surface detection.

Image of FIG. 7.
FIG. 7.

Probe orientations for sheet resistance scans (left) and Hall effect scans (right). The four boundaries are named North, East, South, and West as shown.

Image of FIG. 8.
FIG. 8.

(Color online) Sheet resistance scans on samples with AL. Scans on two 70 μm (filled symbols) and one 100 μm (open symbols) square pads in the directions of North-South and East-West are shown.

Image of FIG. 9.
FIG. 9.

(Color online) Sheet resistance scans on the samples without AL. Scans on two 70 μm (filled symbols) and one 100 μm (open symbol) square pads in the direction North-South are shown.

Image of FIG. 10.
FIG. 10.

(Color online) Sheet resistance and Hall effect scans for the first 70 × 70 μm2 pad without AL. Results from the separate sheet resistance scan (blue symbol, ) and a corresponding fourth order polynomial fit (full blue line) are included. Measured R P (black symbol, ○) and ΔR BB′ (red symbol, □), are shown along with the resulting AI fits (full black line and dashed red line, respectively). The measurements were performed in the North - South direction. Error bars are also plotted for measured data, but are mostly too small to be distinguished.

Image of FIG. 11.
FIG. 11.

(Color online) Sheet resistance and Hall effect scans for the second 70 × 70 μm2 pad without AL. Results from the separate sheet resistance scan (blue symbol, ) and a corresponding fourth order polynomial fit (full blue line) are included. Measured R P (black symbol, ○) and ΔR BB′ (red symbol, □), are shown along with the resulting AI fits (full black line and dashed red line, respectively). The measurements were performed in the North - South direction. Error bars are also plotted for measured data, but are mostly too small to be distinguished.

Image of FIG. 12.
FIG. 12.

(Color online) Hall mobilities extracted from the wafer with AL using the three different fitting methods (AI ⊟, FFS ▾, and FSS ▴).

Image of FIG. 13.
FIG. 13.

(Color online) Hall mobilities extracted from the wafer without AL using the three different fitting methods (AI ⊟, FFS ▾, and FSS ▴).

Image of FIG. 14.
FIG. 14.

(Color online) Detailed Hall effect scan on a 70 × 70 μm2 pad with AL. Measured R P (black symbol, ○) and ΔR BB′ (red symbol, □), are shown along with the resulting fits (full lines). Error bars are also plotted for measured data, but are mostly too small to be distinguished.

Tables

Generic image for table
Table I.

Extracted Hall mobilities.

Generic image for table
Table II.

Relative Hall mobility difference resulting from numerical conformal mapping of a square compared to the VSIS approximation. Only the FSS method is used.

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/content/aip/journal/jap/110/3/10.1063/1.3610505
2011-08-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast micro Hall effect measurements on small pads
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3610505
10.1063/1.3610505
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