(Color online) Reaction chamber used in this research showing (A) top view and (B) side view. In (B) the antenna is shown rotated 90° for clarity. Distance between antenna and sample is 10 cm.
SEM image of surface after PECVD showing masked areas where no catalyst is present and unmasked where nanotubes have been produced (A), scale bar is 10 μm. Increased magnification of the PECVD surface showing short SWCNT (B), scale bar is 2 μm.
(Color online) Raman spectra of the substrate showing boundary between areas with catalyst (SWCNT-solid line) and without catalyst (silicon-dashed line). Inset is a 100 × 100 μm Raman image, plotting the intensity of the G band at 1590 cm−1 showing the boundary between the masked and unmasked areas.
Enlargement of Raman G band region showing G− peak at 1570 cm−1 and G+ peak at 1590 cm−1, characteristic of semiconducting SWCNT.
(Color online) Raman spectra with changing growth time (A) and growth temperature (B).
(Color online) XPS survey spectra for bare silicon, silicon after iron deposition and finally after PECVD growth has occurred.
High resolution XPS spectrum of SWCNT C1s binding region.
Methane dissociation reactions (Ref. 23).
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