Grazing incidence X-ray diffraction pattern of an as-deposited CdS film on a FTO substrate.
Schematic representation of the lateral (coplanar) geometry of the TiN/CdS/TiN (a) and TiN/CdS/Au (b) device structures. (c) J-V curves of the TiN/CdS/TiN (open circles) and the Au/CdS/TiN (open squares) structures.
(a) Layout of four-point resistance measurements. A current sent through points 1 and 4 gives rise to a potential difference between points 2 and 3, from which the resistance R 14,23 (=V 1,2/I 1,4) is calculated. The rectangular dark-gray area is isolated from the surrounding material by cuts with a diamond scriber. (b) Equivalent circuit showing the bulk resistance and series resistance components.
(a) Layout of the impedance spectroscopy sample. (b) Equivalent circuit used to fit the impedance data, in which R 1 and R 2 are resistors and CPE is a constant phase element. (c) Nyquist plot of an FTO/CdS/Au sample annealed at 350 °C in vacuum. The frequency ranges from 100 kHz to 100 Hz in the clockwise direction.
Mott-Schottky plot for the Au/CdS junction of an as-deposited and a vacuum-annealed sample, with capacitance values obtained from the fits of the impedance spectra.
I-V curve of an Au/CdS/TiN diode, with the Au contact connected as the working electrode of the device. The open squares are the measured values, and the solid line is a best fit of the current to Eq. (10). The inset of the graph shows the layout of the sample with parallel contacts.
Proposed band diagram of the Au/CdS/TiN Schottky diode under equilibrium conditions.
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