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Bipolar carrier transport in tris(8-hydroxy-quinolinato) aluminum observed by impedance spectroscopy measurements
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10.1063/1.3615950
/content/aip/journal/jap/110/3/10.1063/1.3615950
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3615950

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Frequency dependence of the capacitance in the Alq3 double-injection diode, sample 1 (ITO/NPB(5 nm)/Alq3(180 nm)/LiF/Al) for V = 0.0, 5.5, 6.0, 6.5, 7.0, 8.0, 8.5, 9.0, and 9.5 V. (b) Frequency dependence of capacitance in sample 1 for V = 0.0, 6.0, 10, 10.5, 11.0, 11.5, 12.0, 12.5, and 13.0 V.

Image of FIG. 2.
FIG. 2.

(Color online) Frequency dependence of –ΔB = –ω·(CC 0) in sample 1 for V = 6.0, 7.0, 8.0, 9.0, 10.0, 11.0, 12.0, and 13.0 V. This value was calculated from the frequency dependence of the capacitance, which is shown in Fig. 1. –ΔB is the negative differential susceptance, ω is the angular frequency, and C 0 is the geometrical capacitance. f ′max and f ″max are the frequencies of the peak values of the –ΔB–frequency curves.

Image of FIG. 3.
FIG. 3.

(Color online) Electric-field dependences of the charge-carrier mobilities in the Alq3 double-injection diode. The electron and the hole [Ref. 22] mobilities of Alq3 measured by IS in Alq3 single-injection diodes. TOF transient photocurrent measurements [Refs. 20 and 21] are also shown. •, •: mobilities measured by IS in sample 1 (ITO/NPB(5 nm)/Alq3(180 nm)/LiF/Al). ♦, ♦: mobilities measured by IS in sample 2 (ITO/NPB(5 nm)/Alq3(110 nm)/LiF/Al). ○: electron mobility measured by IS in the Alq3 electron-only injection diode, sample 3 (Al/Alq3(210 nm)/LiF/Al). ∅, □: hole mobilities measured by IS in the Alq3 hole-only injection diodes, sample 4 and 5 (ITO/NPB(5 nm)/Alq3(180 nm)/Au and ITO/NPB(5 nm)/Alq3(110 nm)/Au [Ref. 22]). Δ, ∇: electron and hole mobilities measured by the TOF transient photocurrent technique detailed in Ref. 20. ▴, ▾: electron and hole mobilities measured by the TOF transient photocurrent technique detailed in Ref. 21.

Tables

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Table I.

Device structures of the double-carrier-injection diodes.

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/content/aip/journal/jap/110/3/10.1063/1.3615950
2011-08-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar carrier transport in tris(8-hydroxy-quinolinato) aluminum observed by impedance spectroscopy measurements
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3615950
10.1063/1.3615950
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