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Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
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10.1063/1.3622336
/content/aip/journal/jap/110/3/10.1063/1.3622336
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3622336
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic configuration of μ-PL contrast measurements at a threading dislocation.

Image of FIG. 2.
FIG. 2.

(Color online) (a) μ-PL intensity mapping at 390 nm for a 72-μm-thick 4H-SiC epilayer after two-step thermal treatment. (b) Surface morphology after KOH etching (the same location). (c) PL intensity profile around a TSD shown in (a). (d) PL intensity profile around a TED shown in (a).

Image of FIG. 3.
FIG. 3.

(Color online) Schematic representation of the carrier recombination around a TD in the cases of: (a) low trap concentration (long bulk lifetime) and (b) high trap concentration (short bulk lifetime).

Image of FIG. 4.
FIG. 4.

(Color online) (a) Map of the fluence of electron irradiation and Z1/2 concentration in the irradiated sample. (b) Map of carrier lifetimes in the irradiated sample. (c) μ-PL intensity mapping at 390 nm of the sample.

Image of FIG. 5.
FIG. 5.

(Color online) μ-PL intensity mapping images taken at the sample regions with various carrier lifetimes: (a) 1.6 μs, (b) 1.4 μs, (c) 1.1 μs, (d) 0.8 μs, (e) 0.5 μs, and (f) 0.1 μs.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Maximum PL contrast (C max) of TDs as a function of the carrier lifetime. (b) Logarithmic plot of the effective diffusion length of TDs as a function of the carrier lifetime.

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/content/aip/journal/jap/110/3/10.1063/1.3622336
2011-08-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/3/10.1063/1.3622336
10.1063/1.3622336
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