(Color online) Schematic configuration of μ-PL contrast measurements at a threading dislocation.
(Color online) (a) μ-PL intensity mapping at 390 nm for a 72-μm-thick 4H-SiC epilayer after two-step thermal treatment. (b) Surface morphology after KOH etching (the same location). (c) PL intensity profile around a TSD shown in (a). (d) PL intensity profile around a TED shown in (a).
(Color online) Schematic representation of the carrier recombination around a TD in the cases of: (a) low trap concentration (long bulk lifetime) and (b) high trap concentration (short bulk lifetime).
(Color online) (a) Map of the fluence of electron irradiation and Z1/2 concentration in the irradiated sample. (b) Map of carrier lifetimes in the irradiated sample. (c) μ-PL intensity mapping at 390 nm of the sample.
(Color online) μ-PL intensity mapping images taken at the sample regions with various carrier lifetimes: (a) 1.6 μs, (b) 1.4 μs, (c) 1.1 μs, (d) 0.8 μs, (e) 0.5 μs, and (f) 0.1 μs.
(Color online) (a) Maximum PL contrast (C max) of TDs as a function of the carrier lifetime. (b) Logarithmic plot of the effective diffusion length of TDs as a function of the carrier lifetime.
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