SEM image of a printed MOM tunneling diode. The substrate is a thermally oxidized silicon wafer. The MOM diode is defined by the overlap of the gold electrode located at the bottom and the aluminum electrode located at the top. The tunneling dielectric is 3.6 nm thick AlO x produced by plasma oxidation of the aluminum electrode prior to Au evaporation and printing. The entire MOM diode was transferred from a stamp onto the target substrate in a single printing step.
(Color online) Mechanical yield of the transfer-printing process plotted as a function of the active area of the MOM tunneling diodes. As can be seen, a high yield of about 83% is obtained over a wide range of diode area.
(Color online) Current density through a transfer-printed MOM tunneling diode measured as a function of applied voltage for both polarities. The aluminum top electrode is set to ground potential, and the current is measured for positive (green data points) or negative (black data points) potentials applied to the gold bottom electrode. The lines represent the kinetic Monte Carlo simulation results using Eq. (1). In the inset the current-voltage curve of a transfer-printed MOM tunneling diode is compared to that of a diode based on the same material stack that was not transfer-printed.
(Color online) Measured capacitance of Al/AlO x /Au diodes as a function of AlO x thickness. The AlO x film with a thickness of 3.6 nm was fabricated by a brief oxygen-plasma treatment that increases the thickness of the native AlO x layer on the aluminum surface, while the thicker AlO x films (6 nm, 12 nm, 25 nm) were deposited by atomic layer deposition (ALD). The permittivity calculated from the measurement data is also shown.
Transfer-printed gold structures.
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