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Structural and electronic properties of nitrogen ion implanted ultra nanocrystalline diamond surfaces
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10.1063/1.3622517
/content/aip/journal/jap/110/4/10.1063/1.3622517
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/4/10.1063/1.3622517

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Fowler-Nordheim plot of the EFE property of UNCD film for (1) as deposited, (2) nitrogen ion implanted, (3) nitrogen ion implanted and post-annealed UNCD films. The inset shows the corresponding J-E curves.

Image of FIG. 2.
FIG. 2.

(Color online) Raman spectra from (a) as prepared, (b) N ion implanted, and (c) post-implantation annealed UNCD samples taken with 514.5 nm.

Image of FIG. 3.
FIG. 3.

(Color online) C1s XPS spectra from (a) as prepared, (b) N ion implanted, and (c) post-implantation annealed UNCD samples.

Image of FIG. 4.
FIG. 4.

(Color online) The low magnification bright field micrographs with the inset showing the SAED pattern for (a) as-deposited, (b) N-ion implanted, and (c) post-implantation annealed UNCD films. The inset ii in (a) is the structure image of the as-deposited films.

Image of FIG. 5.
FIG. 5.

TEM structure image of the (a) small grain region and (b) large grain region of N ion implanted UNCD films.

Image of FIG. 6.
FIG. 6.

The (a) bright field image of the post-implantation annealed UNCD films, which were N ion implanted with a fluence of 1015 ions/cm2 and annealed at 600°C for 30 min; (b) and ( c) the structure images of the large grain region (b) and small grain regions (c). The insets FT1 and FT2 are the FT-images of the upper and lower part of large grains region in (b), whereas inset FT3 is the FT-image of the smaller grain region in (c).

Image of FIG. 7.
FIG. 7.

(Color online) (a) UHV STM picture of as-prepared UNCD sputter cleaned with Ar ions, (b) STS taken in CITS mode showing the current map and (c) normalized differential conductance, , at the grain and grain boundary.

Image of FIG. 8.
FIG. 8.

(Color online) (a) UHV STM image of UNCD after N ion implantation with a fluence of 5 × 1015 ions/cm2 showing globular clusters; (b) high resolution UHV STM image of the same film showing UNCD grains of 2–5 nm size and grain boundaries; (c) and (d) STS taken in CITS mode showing (c) the current map and (d) map at a negative bias of 3.255 V in N ion implanted UNCD.

Image of FIG. 9.
FIG. 9.

(Color online) (a) UHV STM picture of post-implantation annealed UNCD and (b) STS taken in CITS mode showing the current map (c) high resolution UHV STM image from a region in (a) and its corresponding CITS image (d) showing the current map.

Image of FIG. 10.
FIG. 10.

(Color online) I-V curves at the grain (i) and grain boundary (ii) of N ion implanted UNCD films [marked as “3” and “4” in the high resolution UHV STM image, Fig. 8(b)] and at the grain (iii) and grain boundary (iv) of UNCD films after post-implantation annealing [marked as “5” and “6” in the high resolution UHV STM image, Fig. 9(b)]. In each region, 10 numbers of I-V curves have been shown.

Image of FIG. 11.
FIG. 11.

(Color online) (a) Normalized differential conductance ) at the (i) grain and (ii) grain boundaries of N implanted UNCD, (b) at (iii) grain and (iv) grain boundaries after post-implantation annealing. Each spectrum is averaged over 10 scanned spectra shown in the Fig. 10.

Tables

Generic image for table
Table I.

Relative intensities of various components of C1s XPS spectra from as prepared, N-ion implanted and post-annealed UNCD samples.

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/content/aip/journal/jap/110/4/10.1063/1.3622517
2011-08-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electronic properties of nitrogen ion implanted ultra nanocrystalline diamond surfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/4/10.1063/1.3622517
10.1063/1.3622517
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