(Color online) XRD Omega–2Theta scans around the (004) order for intrinsic and doped, as deposited and annealed SLs.
(Color online) Ge concentration profiles for as-grown and annealed SiGe/Si SLs.
(Color online) Ge and B concentration profiles for as-grown and annealed SiGe:B/Si SLs.
(Color online) Ge and P concentration profiles for as-grown and annealed SiGe:P/Si SLs.
(Color online) Ge and C concentration profiles for as-grown and annealed SiGe:C/Si SLs.
(Color online) Total elemental doses extracted from TOF-SIMS profiles for Ge and doping elements.
(Color online) Overlaid simulated and TOF-SIMS profiles for all SLs types (focus on the region around the first valley). TOF-SIMS profiles for SiGe/Si and SiGe:B/Si SLs (SiGe:P/Si and SiGe:C/Si SLs) as-deposited and 850 °C annealed (as-deposited, 750 and 850 °C annealed) are not shown for clarity purposes.
Comparison between Ge diffusivity values in SiGe/Si SLs obtained with the Boltzmann–Matano method and the S-process simulation tool at 10 at. % Ge content. Dotted lines represent data extracted from Ref. 32–34.
(Color online) Diffusivity values for Ge in all SL types, at 10 at. % Ge content.
(Color online) Diffusivity values for B in SiGe:B/Si and for P in SiGe:P/Si SLs at 10 at. % Ge content. Dotted lines represent data extracted from Ref. 41 for P and Ref. 42 for B.
(Color online) Dark holography strain maps acquired on SiGe/Si SLs (top row) and SiGe:C/Si SLs (bottom row) after either their epitaxy at 650 °C [(1) and (3): left column] or a 2 min anneal at 1050 °C [(2) and (4): right column]. The sample substrate is on the bottom left-hand corner of each image. The top right-hand corner corresponds to a resist layer deposited prior to preparation in order to protect the sample surface.
(Color online) Dark holography strain profiles (crosses) and pressure profiles from S-Process simulations (dotted lines) for as-grown (at 650 °C) and annealed (at 1050 °C for 2 min in H2) SiGe/Si SLs (top) and SiGe:C/Si SLs (bottom). The huge discrepancy between experimental strain profiles and stress simulations in the case of as-grown SiGe:C/Si SLs is due to the fact that the S-Process software is not able to take into account the strain compensation by substitutional C atoms in SiGe:C layers. The reason why the simulated stress is higher in the SiGe:C layers than in the SiGe layers is then fairly simple: the Ge concentration is equal to 24.5% in the former vs 21.4% in the latter (see Table I).
Mean SiGe and Si layer thickness (XRR) together with the apparent Ge concentration in the SiGe layer and the mean Ge concentration in a period (XRD) in the four types of SLs and the real Ge concentration in the SiGe layer (TOF-SIMS).
Input parameters of Eq. (1) during simulation process for each type of SLs.a
Diffusivities extracted from S-process simulation (in cm2 s−1) for all SLs types and at four different Ge% contents.
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