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Elastic properties of porous low-k dielectric nano-films
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10.1063/1.3624583
/content/aip/journal/jap/110/4/10.1063/1.3624583
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/4/10.1063/1.3624583

Figures

Image of FIG. 1.
FIG. 1.

Representative spectra recorded at different scattering angles θ = 0°, 20°, 30°, 50°, and 60° for a 100 nm Si0.2C0.8:H#2 film at the threshold of porosity. Peaks observed at the lowest scattering angles are the standing longitudinal modes 1LSM and 2LSM. As θ increases, additional modes, including the transverse resonance (2TSM), emerge.

Image of FIG. 2.
FIG. 2.

Dispersion of acoustic modes supported in the h = 100 nm porous Si0.8C0.2:H#2 low-k dielectric film showing variation of the mode frequencies with the scattering angle θ. The measured data are represented by large, solid, dark dots, and the small dots are fits. The group of three higher (lower) frequency lines is the LA, TA, and Rayleigh modes associated with the silicon substrate (bulk film). The left-hand panel illustrates mode displacements within the film for excitations near θ = 0°; the solid line is Ux and the dotted line is Uz corresponding to the standing modes TSM and LSM. Here x identifies the direction of the mode propagation parallel to film surface, and z is that normal to the surface.

Image of FIG. 3.
FIG. 3.

Representative spectra recorded at different scattering angles θ = 20°, 30°, 40°, and 60° for a 150 nm thick SiOC:H#4 film at ∼25% porosity. Peaks observed at higher scattering angles emerge from the longitudinal standing mode (1LSM) and the 2LSM and 3TSM modes, the frequencies of which overlap.

Image of FIG. 4.
FIG. 4.

Dispersion of acoustic modes supported in the h = 150 nm porous SiOC:H#4 low-k dielectric film showing variation of the mode frequencies with the scattering angle θ. The data are solid dark dots, and the small dots are fits. The group of three higher (lower) frequency lines is the LA, TA, and Rayleigh mode associated with the silicon substrate (bulk film). The left-hand panel illustrates mode displacements within the film for excitations near θ = 0°; the solid line is Ux and the dotted line is Uz corresponding to the standing modes TSM and LSM.

Image of FIG. 5.
FIG. 5.

The calculated and measured dispersion curves for the principal and higher order modes supported in the Si0.2C0.8:H#2 film at the threshold of porosity (≤2%) as a function of the normalized thickness K//h. The solid line identifies , the velocity above which the waves have an oscillatory component in the substrate.

Image of FIG. 6.
FIG. 6.

The calculated and measured dispersion curves for the principal and higher order modes supported in the SiOC:H#4 film with 25% porosity as a function of the normalized thickness K//h. The solid line identifies , the velocity above which the waves have an oscillatory component in the substrate.

Tables

Generic image for table
Table I.

Summary of general process gases and conditions utilized to deposit the low-k dielectric films in this study through PECVD. The concentrations of the constituents are indicated by p, q, and r.

Generic image for table
Table II.

Summary of some of the material properties for the low-k dielectric films in this study, where h is the film thickness in nanometers, k the dielectric constant (k ± 0.05), n is the refractive index (n ± 0.002), and ρ is the mass density in g/cm3 (ρ ± 0.05).

Generic image for table
Table III.

Summary of the BLS results, where E is Young’s modulus.

Generic image for table
Table IV.

Comparison of Young’s modulus for the films of this study as determined by BLS, NI, and PLU.

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/content/aip/journal/jap/110/4/10.1063/1.3624583
2011-08-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Elastic properties of porous low-k dielectric nano-films
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/4/10.1063/1.3624583
10.1063/1.3624583
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