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Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures
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10.1063/1.3624621
/content/aip/journal/jap/110/4/10.1063/1.3624621
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/4/10.1063/1.3624621

Figures

Image of FIG. 1.
FIG. 1.

(Color online) High resolution SEM images of the InAsSbP QD/leaf cooperative structures (A). (B) and (C): enlarged view of the nano-camomiles. White ovals are QDs, black ovals are leaves.4 A schematic picture is shown in the center.

Image of FIG. 2.
FIG. 2.

FTIR spectra of the InAs test sample and the InAsSbP QD/leaf structure sample.4

Image of FIG. 3.
FIG. 3.

(Color online) Top and side view of the lens-shaped InAsSb/InAsP QD molecule. For the half-lens-shaped molecule, the structure is cut in half in the middle perpendicular to the growth direction, marked by a dash-dotted red line in the side view.

Image of FIG. 4.
FIG. 4.

(Color online) Bulk conduction (red, light gray) and valence band (blue, dark gray) offset along the [010]-direction from the boundary to the center of the system. The InAsP leaves and InAsSb dots are indicated as ellipsoids where dark (light) gray indicates high (low) P or Sb content (color online).

Image of FIG. 5.
FIG. 5.

(Color online) Diagonal components of the strain tensor plotted along the [010]-direction through the center of the dot and two leaves.

Image of FIG. 6.
FIG. 6.

(Color online) Conduction (red, light gray) and valence band (blue, dark gray) offsets modified by strain and built-in electrostatic potentials plotted along the [010]-direction from the boundary to the center of the system (color online). The three highest valence bands are split due to strain. Minor numerical wiggles occur around the dot and leaves boundaries due to abrupt interfaces occurring in these regions.

Image of FIG. 7.
FIG. 7.

(Color online) Polarization potential of the InAsSb-dot/InAsPleaves molecule in a 3D view. Bright (dark) yellow isosurfaces with sixfold symmetry mark the central dot (surrounding leaves). The red and green isosurfaces exhibiting a twofold symmetry mark a potential of 60:17 mV.

Image of FIG. 8.
FIG. 8.

(Color online) Electron ground state and hole states closest to the bandgap for model calculations including (left) and excluding (right) the modification of the bulk electronic properties due to strain. The QD-molecule is marked yellow (light gray). Blue (dark gray) isosurfaces represent 50% of the maximum charge density for the hole states and 90% for the electron state.

Tables

Generic image for table
Table I.

Electron and hole eigenenergies in eV. denote electron/hole wave functions.

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/content/aip/journal/jap/110/4/10.1063/1.3624621
2011-08-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/4/10.1063/1.3624621
10.1063/1.3624621
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