Schematic of doped Si substrate with semi-infinite dielectric cover layer. SPP propagation along the x-axis and the z-axis confinement are as illustrated.
(Color online) (a) Simulated as-implanted and activated dopant profile for n+ and p+ wafers (n+ wafer 4 and p+ wafer 3). (b) The ratio of the extracted Drude resistance to measured sheet resistance (ρ/R s ) for each wafer. This quantity corresponds to an electrical measurement of the dopant layer in microns.
(Color online) Measured relative reflection from p+ (wafer 6) and n+ (wafer 4) Si wafers for both s and p polarization at 25° incidence. The inset shows the Drude model fits for both wafers.
(Color online) (a) SPP effective index n spp (solid lines) and extinction coefficient K spp (dashed lines) for air, n+, p+, and Au SPP, respectively. (b) Plot of the characteristic decay lengths of SPP mode in the dielectric media (left axis: solid lines), and in the metallic media (right axis: dashed lines) for air/ n+, p+, or Au interfaces (lower (purple) line: p+Si, middle (black) line: n+Si, upper (gold) line: Au).
p+ boron implant conditions for Si.
n+ phosphorus implant conditions for Si. Here * = RTA 5 min 850 °C + 20 s 1050 °C.
Sheet resistance (R s in Ohms/square) and Drude model parameters, ɛ Si , plasma wavelength (λ pl = 2πc/ω pl ), collision time (τ) where l = cτ is the collision length (c is the speed of light), and extracted Drude resistance ρ × 10−6 (Ohms-meter) for n+ and p+ doped Si.
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