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Infrared plasmons on heavily-doped silicon
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Image of FIG. 1.
FIG. 1.

Schematic of doped Si substrate with semi-infinite dielectric cover layer. SPP propagation along the x-axis and the z-axis confinement are as illustrated.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Simulated as-implanted and activated dopant profile for n+ and p+ wafers (n+ wafer 4 and p+ wafer 3). (b) The ratio of the extracted Drude resistance to measured sheet resistance (ρ/R s ) for each wafer. This quantity corresponds to an electrical measurement of the dopant layer in microns.

Image of FIG. 3.
FIG. 3.

(Color online) Measured relative reflection from p+ (wafer 6) and n+ (wafer 4) Si wafers for both s and p polarization at 25° incidence. The inset shows the Drude model fits for both wafers.

Image of FIG. 4.
FIG. 4.

(Color online) (a) SPP effective index n spp (solid lines) and extinction coefficient K spp (dashed lines) for air, n+, p+, and Au SPP, respectively. (b) Plot of the characteristic decay lengths of SPP mode in the dielectric media (left axis: solid lines), and in the metallic media (right axis: dashed lines) for air/ n+, p+, or Au interfaces (lower (purple) line: p+Si, middle (black) line: n+Si, upper (gold) line: Au).


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Table I.

p+ boron implant conditions for Si.

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Table II.

n+ phosphorus implant conditions for Si. Here * = RTA 5 min 850 °C + 20 s 1050 °C.

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Table III.

Sheet resistance (R s in Ohms/square) and Drude model parameters, ɛ Si , plasma wavelength (λ pl  = 2πc pl ), collision time (τ) where l = cτ is the collision length (c is the speed of light), and extracted Drude resistance ρ × 10−6 (Ohms-meter) for n+ and p+ doped Si.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infrared plasmons on heavily-doped silicon