TEM micrograph of CrO2/natural barrier/Co layers on (110) TiO2 substrate. (a) shows the sharp interface with the natural barrier and (b) is the high resolution image around the natural barrier.
(Color online) Typical resistance against temperature behavior of a CrO2/natural barrier/Co device. Lateral schematic diagram of the device is shown in the inset. SiO2 was deposited to keep the top and bottom electrodes electrically isolated. The region between Co and CrO2 is the natural insulation barrier.
(Color online) TMR of the device at three different temperatures. Temperature dependence of TMR is shown in the inset. The arrows represent the relative orientations of the top and bottom magnetic layers with applied magnetic field.
(Color online) Schematic energy diagram of IETS phenomenon between two metal electrodes sandwiching an insulating barrier. The increase in current due to inelastic tunneling of electrons at a particular voltage and corresponding changes in its first and second derivative are schematically shown.
(Color online) Fitting of current (a) and conductance (b) against bias voltage with BDR model. (c) Current density against bias voltage in the device with Simmons fit.
(Color online) IETS spectra obtained in the (110) CrO2/natural barrier/Co junction for positive and negative biases. Vertical lines show the positions of a few Cr2O3 vibrational lines from infrared spectroscopy.
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