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Thermoelectric properties for single crystal bismuth nanowires using a mean free path limitation model
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10.1063/1.3630014
/content/aip/journal/jap/110/5/10.1063/1.3630014
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3630014
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Temperature dependence of Fermi energy for electrons () and holes () and literature value of carrier density [Refs. 24 and 25]. The inset shows the schematic diagram of band structure for bismuth at L-point and T-point near the Fermi energy ().

Image of FIG. 2.
FIG. 2.

(Color online) Calculation results of temperature dependence of mobility for bulk bismuth and bismuth nanowire sample toward the crystal orientation. An inset shows the temperature dependence of the mobility ratio .

Image of FIG. 3.
FIG. 3.

(Color online) Calculated and measured results of temperature dependence of resistivity and Seebeck coefficient. Calculation results were shown by doted lines. An inset shows a scanning electron microscope image at edge of the measured nanowire sample.

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/content/aip/journal/jap/110/5/10.1063/1.3630014
2011-09-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties for single crystal bismuth nanowires using a mean free path limitation model
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3630014
10.1063/1.3630014
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