1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
Rent:
Rent this article for
USD
10.1063/1.3631088
/content/aip/journal/jap/110/5/10.1063/1.3631088
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3631088

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Measured (symbols) IV curves in inversion with and without illumination, and the corresponding (b) FN and PF plots and (c),(d) α-V plots [(d) shows a zoomed view of (c)] for a MOS capacitor with an Al/TiN gate electrode, a SiO2 dielectric 9.6 nm in thickness, and p-type silicon. The gate area is 104 μm2. The calculated (lines) IV and α-V curves using the parameters from Table I are shown for comparison and evaluation. For all calculated curves, the leakage current is considered.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Measured (symbols) IV curves in accumulation without illumination, and the corresponding (b) FN plot and PF plot and (c),(d) α-V plots [(d) shows a zoomed view of (c)] for the same MOS capacitor as in Fig. 1. The calculated (lines) IV and α-V curves using the parameters from Table I are shown for comparison and evaluation. Curves that take into account both FN and PF currents are indicated by their fraction in %. For all calculated curves, the leakage current is considered.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Temperature dependent IV curves in both inversion (with illumination) and accumulation (in the dark) and (b) corresponding Arrhenius plots with various electrical fields for IV curves in accumulation.

Tables

Generic image for table
Table I.

Parameters extracted from FN plots and PF plots [see Eqs. (2) and (5)] for the different measurement conditions (i.e., in inversion or accumulation, with or without light illumination).

Loading

Article metrics loading...

/content/aip/journal/jap/110/5/10.1063/1.3631088
2011-09-08
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3631088
10.1063/1.3631088
SEARCH_EXPAND_ITEM