(Color online) SEM of nanopatterned Si structures with 15- and 25-nm-thick growth masks: (a), (b) samples without epi-Ge, (c), (d) samples with epi-Ge.
(Color online) Dependence of Si–Si vibration Raman shift on position during a scan across the structure (a) and Fourier transform of the Si-Si peak intensity and position (b).
(Color online) Displacement field in Si nanostructure under stress from SiO2 mask.
(Color online) Raman shift of Si–Si vibration in nanopatterned Si structures without epi-Ge covered by 15 nm and 25 nm SiO2: (a), (b) LO mode, (c), (d) TO1 mode, (e), (f) TO2 mode.
(Color online) Cross section TEM image of nanopatterned Si substrate.
(Color online) Map of Raman shift of Si–Si and Ge–Ge vibration. The average values for Ge (Si) signal are −0.13 (−0.05) and −0.14 (−0.06) cm−1 for 15 and 25 nm SiO2, respectively.
(Color online) Strain energy density of Ge/Si nanostructure with 15- (a) and 25-nm-thick (b) oxide.
(Color online) Cross section overview (a), Wulff construction (b), region close to bird’s beak (c), and plane view (d) TEM images of epi-Ge grown on nanopatterned Si substrate with 15 nm SiO2 mask.
(Color online) Calculated Raman shift in Ge crystal on Si nanostructure covered by 25 nm oxide: (a) LO, (b) TO1, and (c) TO2. Comparison of Raman shift on the surface of Ge (d).
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