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Dislocation structure of GaN films grown on planar and nano-patterned sapphire
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10.1063/1.3631823
/content/aip/journal/jap/110/5/10.1063/1.3631823
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3631823
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Surface morphology of (a) conventional GaN grown on planar sapphire [30 nm LT GaN and 3 min HT GaN], (b) AGNP-GaN grown on a patterned substrate [15 nm LT GaN and 3 min HT GaN].

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of reflectivities during n-doped AGNP-GaN and conventional GaN template growth.

Image of FIG. 3.
FIG. 3.

Bright field cross-section TEM images taken at zone axis [1-210] for (a) conventional GaN, and (b) AGNP-GaN. The white arrow points to a dislocation bending 90o. The bent dislocation is also shown at greater magnification in the inset of (a).

Image of FIG. 4.
FIG. 4.

(Color online) Representative bright field plane view TEM images taken at [0001] zone axis for (a) conventional GaN, and (b) AGNP-GaN.

Image of FIG. 5.
FIG. 5.

(Color online) Distribution of dislocation bending angles and types for (a) conventional GaN, and (b) AGNP-GaN.

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/content/aip/journal/jap/110/5/10.1063/1.3631823
2011-09-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation structure of GaN films grown on planar and nano-patterned sapphire
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3631823
10.1063/1.3631823
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