(Color online) Surface morphology of (a) conventional GaN grown on planar sapphire [30 nm LT GaN and 3 min HT GaN], (b) AGNP-GaN grown on a patterned substrate [15 nm LT GaN and 3 min HT GaN].
(Color online) Comparison of reflectivities during n-doped AGNP-GaN and conventional GaN template growth.
Bright field cross-section TEM images taken at zone axis [1-210] for (a) conventional GaN, and (b) AGNP-GaN. The white arrow points to a dislocation bending 90o. The bent dislocation is also shown at greater magnification in the inset of (a).
(Color online) Representative bright field plane view TEM images taken at  zone axis for (a) conventional GaN, and (b) AGNP-GaN.
(Color online) Distribution of dislocation bending angles and types for (a) conventional GaN, and (b) AGNP-GaN.
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