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Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
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10.1063/1.3632058
/content/aip/journal/jap/110/5/10.1063/1.3632058
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3632058

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Si MOSFET N1: Measured magnitude (a) and (c) and phase (b) of the photovoltage (points) for different radiation modulation frequencies (a) and (b) and different external load resistors (c) together with model curves calculated from Eq. (15) (thin black lines) with the parameter A = 1.25 × 10−4 V2 and the detection limit calculated from Eq. (14) (thick gray line, part (a)).

Image of FIG. 2.
FIG. 2.

Equivalent electrical circuit used to understand the loading effects. Here V is the measured photovoltage, ΔU is the photoresponse of the transistor, RCH is the channel resistance, CL is a parasitic capacitance, ωm is the modulation frequency, RL is the external load resistor (if present), and RIN is the input resistance of the preamplifier.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of the detection signal of Si MOSFET N1 measured at RL  = 0 with different instruments: dc voltmeter (squares), dc ammeter multiplied by the channel resistance (thick gray line), and lock-in at ωm  = 133 Hz multiplied by (thin black line). Right scale (dashed line): dc transfer characteristics for 1 mV of source-to-drain voltage.

Image of FIG. 4.
FIG. 4.

(Color online) GaAs HEMT: (a) dc transfer characteristics, IDS (Vg ) and (b) measured (points) and the calculated (Eq. (15), lines) photovoltages at two temperatures: 275 K and 150 K with the parameter A = 7 × 10−5 V2 and 5.2 × 10−5 V2, respectively.

Image of FIG. 5.
FIG. 5.

(Color online) GaN HEMT: (a) dc transfer characteristics, IDS (Vg ) and (b) measured (points) and the calculated (Eq. (15), lines) photovoltages at two temperatures: 250 K and 150 K with the parameter A = 1.24 × 10−4 V2 and 1.84 × 10−4 V2, respectively.

Image of FIG. 6.
FIG. 6.

(Color online) Si MOSFET N2: (a) dc transfer characteristics, IDS (Vg ) and (b) measured (points) and the calculated (Eq. (15), lines) photovoltages at three temperatures: 275 K, 225 K, and 175 K with the parameter A = 1.41 × 10−2 V2, 1.08 × 10−2 V2, and 1.03 × 10−2 V2, respectively.

Tables

Generic image for table
Table I.

The main parameters of the transistors.

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/content/aip/journal/jap/110/5/10.1063/1.3632058
2011-09-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3632058
10.1063/1.3632058
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