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Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
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10.1063/1.3633522
/content/aip/journal/jap/110/5/10.1063/1.3633522
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3633522

Figures

Image of FIG. 1.
FIG. 1.

(Color) Correlation of the PFM measurement of an as-grown surface (a), a FESEM image of an as-grown surface (b), and a FESEM image of a post-polarity-sensitive etch surface (c) for the same location on an AlN buffer layer. The PFM image shows the topography (brown) with a phase overlay (green = Al-polar, unmarked = N-polar). The as-grown FESEM image has a PFM phase overlay with the tip image artifacts removed (green = Al-polar, blue = N-polar, unmarked = data removed due to tip imaging).

Image of FIG. 2.
FIG. 2.

Plan and cross-sectional FESEM images of as-grown [(a)-(c)] and polarity-sensitive etched [(d)-(f)] AlN films grown under [(a) and (d)] very N-rich conditions (V/III flux ratio = 1.7), [(b) and (e)] slightly N-rich conditions (V/III flux ratio = 1.3), and [(c) and (f)] Al-rich conditions (V/III flux ratio = 0.8).

Image of FIG. 3.
FIG. 3.

(Color) PFM images of the AlN film topography (brown) and the PFM phase overlay (green = Al-polar, unmarked = N-polar) corresponding to (a) very N-rich conditions (V/III flux ratio = 1.7), (b) slightly N-rich conditions (V/III flux ratio = 1.3), and (c) Al-rich conditions (V/III flux ratio = 0.8). The z-height scale is 150 nm for (a), 105 nm for (b), and 45 nm for (c).

Image of FIG. 4.
FIG. 4.

FESEM images in plan view [(a)-(c)] and 40° tilt view [(d)-(f)] showing the morphology of GaN nanowires grown on AlN buffer layers with Al/N flux ratios corresponding to [(a) and (d)] very N-rich conditions (V/III flux ratio = 1.7), [(b) and (e)] slightly N-rich conditions (V/III flux ratio = 1.3), and [(c) and (f)] near stoichiometric flux conditions (V/III flux ratio = 1.0).

Image of FIG. 5.
FIG. 5.

(a) TEM image of GaN nanowires grown on a slightly N-rich AlN buffer layer (V/III flux ratio = 1.3). Also shown are experimental (b) and simulated (c) CBED diffraction patterns showing the Ga-polarity of a long nanowire. The CBED pattern was calculated for a sample thickness of 38 nm.

Image of FIG. 6.
FIG. 6.

FESEM images of low temperature GaN nanowire growth on N-polar [(a)-(b)] and Al-polar [(c)-(d)] AlN buffer layers showing the as-grown [(a) and (c)] and post-polarity-sensitive etched morphology [(b) and (d)]. The arrows indicate the N-face as determined from the emergence of pyramidal etch structures.

Tables

Generic image for table
Table I.

Summary of polarity measurements for AlN buffer layers and GaN nanowire samples.

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/content/aip/journal/jap/110/5/10.1063/1.3633522
2011-09-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3633522
10.1063/1.3633522
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