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Pressure-induced phase transformations during femtosecond-laser doping of silicon
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10.1063/1.3633528
/content/aip/journal/jap/110/5/10.1063/1.3633528
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3633528
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) SEM micrographs showing the surface morphology of fs-laser irradiated Si. The laser scan direction and polarization were in the horizontal direction. (b) Stokes Raman spectra of SF6:Si, Se:Si, and N2:Si, offset to show individual spectra. The rescaled inset highlights the Raman modes corresponding to a-Si, Si-III, and Si-XII. The color designation is the same in both plots. (c) The position of the Si-XII and Si-III modes and their relative intensities. Dashed lines indicate the positions of the Si-XII (350 cm−1) and Si-III (432 cm−1) Raman modes reported in nanoindentation studies (Ref. 29).

Image of FIG. 2.
FIG. 2.

(Color online) Cross-sectional BF-TEM images of N2:Si (a) and SF6:Si (b). SAD patterns from the regions highlighted by the dashed circles (inset) correspond to the Si-I [101] zone axis. White arrows indicate contrast in the core of the peaks arising from 20 nm to 200 nm areas of transformed material shown to be a-Si. (c) BF-TEM image of an isolated region of a-Si from the core of a SF6:Si spike. Numbered spots correspond to points probed using CBED (d) and EELS (e). (f) BF-TEM image of the region in (b) that shows nanocrystals (black arrows) inside the a-Si.

Image of FIG. 3.
FIG. 3.

(Color online) (a) BF-TEM image of Se:Si peak showing a polycrystalline region and small volumes of a-Si (arrows). (b) SAD pattern from the region corresponding to the dashed circle in (a). Spots corresponding to the Si-III [101] zone axis can be identified within the Si-I polycrystalline pattern (rings), and lower order spots are identified by circles.

Image of FIG. 4.
FIG. 4.

(Color online) (a) SEM micrographs of the Se:Si surface morphology evolution with increasing laser pulse number. The laser scan direction and polarization were in the horizontal direction. (b) Stokes Raman spectra of Se:Si irradiated with an increasing number of laser pulses, offset to show the individual spectra. The inset is rescaled to highlight the Raman modes corresponding to a-Si, Si-III, and Si-XII. The color designation is the same in both plots. (c) Bar graphs showing the position of the Si-XII and Si-III modes and their relative intensities after 25, 42, and 88 laser pulses.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Absorptance spectra of Se:Si after a 30 min anneal at the indicated temperatures. Included for reference are spectra from non-annealed (NA) Se:Si and N2:Si, taken from Ref. 29, and from a silicon wafer. (b) Stokes Raman spectra of the same samples (250 to 500 cm−1). The spectra are offset to highlight the a-Si, Si-III, and Si-XII peaks and their evolution with annealing. NA Se:Si is included for reference. (c) Bar graphs showing the position of the Si-XII and Si-III modes and their relative intensities with annealing.

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/content/aip/journal/jap/110/5/10.1063/1.3633528
2011-09-15
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pressure-induced phase transformations during femtosecond-laser doping of silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/5/10.1063/1.3633528
10.1063/1.3633528
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