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Point contact Andreev spectroscopy of epitaxial Co2FeSi Heusler alloys on GaAs (001)
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10.1063/1.3632063
/content/aip/journal/jap/110/6/10.1063/1.3632063
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3632063

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sketch of the contact in (a) the ballistic and (b) the diffusive regime, mimicked by an additional disordered region. The transmission probabilities differ in the two cases.

Image of FIG. 2.
FIG. 2.

(a) Circuit diagram of the low-temperature measurements. R is the resistance of the point contact in case of a PCAR measurement. (b) Temperature dependent measurement of the film resistivity in four terminal van-der-Pauw geometry. (c) Point-contact measurement using two contacts on the film surface and two contacts on the superconducting tip.

Image of FIG. 3.
FIG. 3.

(Color online) PCAR spectra (Nb/Co2FeSi/GaAs) of the 18 nm thin samples. The spectra are corrected by a series resistance Rs , normalized by the resistance Rn , and offset for clarity. The black lines are best fits calculated with the diffusive BTK model. The values for the polarization P and the contact quality Z are plotted in the insets. An extrapolation to Z = 0 estimates the spin polarization at the Fermi energy.

Image of FIG. 4.
FIG. 4.

(Color online) PCAR measurements (Nb/Co2FeSi/GaAs) on the 48 nm thick samples.

Image of FIG. 5.
FIG. 5.

(Color online) Temperature dependent resistivities of the three investigated 18 nm Co2FeSi films (PDI-1 to PDI-3). At 77 K results from earlier measurements at liquid Nitrogen temperature are indicated by black crosses.

Tables

Generic image for table
Table I.

Substrate temperature at deposition, film thickness, spin polarization, and resistivity at T = 2 K of the Co2FeSi films.

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/content/aip/journal/jap/110/6/10.1063/1.3632063
2011-09-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Point contact Andreev spectroscopy of epitaxial Co2FeSi Heusler alloys on GaAs (001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/6/10.1063/1.3632063
10.1063/1.3632063
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